Annealing Treatment of Ferroelectric Pb (Zr0.52Ti0.48)O3 Thin Films with La0.5Sr0.5CoO3 Buffer Layer

Jie Guo; Wei Liu; Shi Qing Man

doi:10.4028/www.scientific.net/AMR.739.42

Paper Titles

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Study on the Crystallinity and Mechanical Properties of PC/PLA/LLDPE/ Montmorillonite Blends
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Annealing Treatment of Ferroelectric Pb (Zr_0.52Ti_0.48)O₃ Thin Films with La_0.5Sr_0.5CoO₃ Buffer Layer
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Annealing Treatment of Ferroelectric Pb (Zr_0.52Ti_0.48)O₃ Thin Films with La_0.5Sr_0.5CoO₃ Buffer Layer

Abstract:

Lead zirconium titanate Pb (Zr_0.52Ti_0.48)O₃ (PZT) thin films have been deposited on Pt/Ti/Si substrate by rf-magnetron sputtering. X rays diffraction revealed that at 600°C the PZT thin film had crystallized into ABO₃perovskite phase. Degree of crystallization depended on annealing temperature. The perovskite grains were textured predominantly along the (110) direction. The grain size was about 140 nm and almost unchanged under different annealing temperature. With the annealing temperature increasing, the degree of crystallization was improved. La_0.5Sr_0.5CoO₃(LSCO) thin film was grown on Pt/Ti/Si as buffer layer. PZT with LSCO buffer layer was intensively (110) preferred orientation and the morphology of PZT thin film changed greatly.