Paper Titles

Preface, Committees and Sponsors

An Experimental Study of Properties of Ultrathin Si Layer with Bonded Si/SiO₂ Interface
p.3

Transport and Photoelectric Effects in Structures with Ge and SiGe Nanoclusters Grown on Oxidized Si (001)
p.11

Effect of Ge-Nanoislands on the Low-Frequency Noise in Si/SiO_x/Ge Structures
p.21

Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films
p.29

On the Mobility Behavior in Highly Doped Junctionless Nanowire SOI MOSFETs
p.35

High Sensitive Active MOS Photo Detector on the Local 3D SOI-Structure
p.45

Properties of Low-Dimentional Polysilicon in SOI Structures for Low Temperature Sensors
p.49

Carbon-Rich Nanostructurated a-SiC on Si Heterostructures for Field-Effect Electron Emission
p.59

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 854Transport and Photoelectric Effects in Structures...

Transport and Photoelectric Effects in Structures with Ge and SiGe Nanoclusters Grown on Oxidized Si (001)

Article Preview

Abstract:

Crystalline germanium nanoclusters (NCs) are grown by a molecular-beam epitaxy technique on chemically oxidized Si (100) surface at 700oC. Deposition of silicon on the surface with Ge nanoclusters leads to surface reconstruction and formation of polycrystalline diamond-like Si coverage, while nanoclusters core becomes tetragonal SiGe alloy. Possible mechanisms for nanoclusters growth are discussed. Selective photoexcitation of Ge or SiGe nanoclusters or space-charge layer of underlying Si allows to observe two non-equilibrium steady-states with higher and lower conductivity values as compared to the equilibrium one. The persistent photoconductivity (PPC) behaviour was observed after excitation of electron-hole pairs in Si (001) substrate. This effect may be attributed to spatial carrier separation by macroscopic fields in the depletion layer of the near-surface Si. Decreasing of surface conductivity, driven by optical recharging of NCs and Si/SiO₂ interface states, is observed in the spectral range from 0.6 to 1.0 eV. Conductivity drop is discussed in the terms of hole accumulation by Ge-NC states enhancing the local-potential variations and, therefore, decreasing the surface conductivity of p-Si.

You might also be interested in these eBooks

Functional Nanomaterials and Devices VII

Info:

Periodical:

Advanced Materials Research (Volume 854)

Pages:

11-19

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.854.11

Citation:

Cite this paper

Online since:

November 2013

Authors:

V.S. Lysenko, Y.V. Gomeniuk, S.V. Kondratenko, Ye.Ye. Melnichuk, Y.N. Kozyrev, C. Teichert

Keywords:

Ge-Nanocluster, Heterostructures, Photoconductivity

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

[1] K. Brunner, Si/Ge nanostructures, Rep. Prog. Phys. 65 (2002) 27-72.

[2] O.G. Schmidt, K. Eberl, Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation, Phys. Rev. B 61 (2000) 13721-13729.

DOI: 10.1103/physrevb.61.13721

[3] A.A. Shklyaev, M. Ichikawa, Three-dimensional Si islands on Si(001) surfaces, Phys. Rev. B 65 (2001) 045307.

DOI: 10.1103/physrevb.65.045307

[4] A.A. Shklyaev, M. Shibata, and M. Ichikawa, High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO2 coverage, Phys. Rev. B 62 (2000) 1540-1543.

DOI: 10.1103/physrevb.62.1540

[5] L. Zhang, H. Ye, Y.R. Huangfu, C. Zhang, and X. Liu, Densely packed Ge quantum dots grown on SiO2/Si substrate, Appl. Surf. Sci. 256 (2009) 768-772.

DOI: 10.1016/j.apsusc.2009.08.057

[6] V.S. Lysenko, Yu.V. Gomeniuk, Yu.N. Kozyrev, M. Yu. Rubezhanska, V.K. Sklyar, S.V. Kondratenko, Ye. Ye. Melnichuk, C. Teichert, Effect of Ge nanoislands on lateral photoconductivity of Ge-SiOx-Si structures, Adv. Mat. Res. 276 (2011) 179-186.

DOI: 10.4028/www.scientific.net/amr.276.179

[7] D.W. Kwak, C.J. Park, Y.H. Lee, W.S. Kim, and H.Y. Cho, Nanotechnology 20 (2009) 055201.

[8] R. Peibst, J.S. de Sousa, K.R. Hofmann, Determination of the Ge-nanocrystal/SiO2 matrix interface trap density from the small signal response of charge stored in the nanocrystals, Phys. Rev. B 82 (2010) 195415.

DOI: 10.1103/physrevb.82.195415

[9] Y. Chen, Y.F. Lu, L.J. Tang, Y.H. Wu, B.J. Cho, X.J. Xu, J.R. Dong, W.D. Song, Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition, J. Appl. Phys. 97 (2005) 014913.

DOI: 10.1063/1.1829789

[10] J. -M. Baribeau, X. Wu, N.L. Rowell, and D.J. Lockwood, Ge dots and nanostructures grown epitaxially on Si, J. Phys.: Cond. Matter 18 (2006) R139.

DOI: 10.1088/0953-8984/18/8/r01

[11] V.S. Lysenko, Yu.V. Gomeniuk, V.V. Strelchuk, A.S. Nikolenko, S.V. Kondratenko, Yu.N. Kozyrev, M. Yu. Rubezhanska, C. Teichert, Carrier transfer effect on transport in p-i-n structures with Ge quantum dots, Phys. Rev. B 84 (2011) 115425.

DOI: 10.1103/physrevb.84.115425

[12] G.G. Macfarlane, T.P. McLean, J.E. Quarrington, and V. Roberts, Exciton and phonon effects in the absorption spectra of germanium and silicon, J. Phys. Chem. Solids 8 (1959) 388-392.

DOI: 10.1016/0022-3697(59)90372-5

[13] F. Urbach, The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids, Phys. Rev. 92 (1953) 1324.

DOI: 10.1103/physrev.92.1324

[14] A.V. Dvurechenskii, A.V. Nenashev, A.I. Yakimov, Electronic structure of Ge/Si quantum dots, Nanotechnology 13 (2002) 75-80.

DOI: 10.1088/0957-4484/13/1/317

[15] K. Yasutake, Z. Cheng, S.K. Pang, and A. Rohatgi, Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2–Si interface, J. Appl. Phys. 75 (1994) 2048-(2054).

DOI: 10.1063/1.356307

[16] M.K. Sheinkman and A. Ya. Shik, Long-term relaxations and persistent conductivity in semiconductors, Fiz. Tekh. Poluprovodn. 10 (1976) 209 [Sov. Phys. Semicond. 10, (1976) 128].

[17] H.J. Queisser and D.E. Theodorou, Decay kinetics of persistent photoconductivity in semiconductors, Phys. Rev. B 33 (1986) 4027-4033.

DOI: 10.1103/physrevb.33.4027

[18] H.J. Queisser, Nonexponential relaxation of conductance near semiconductor interfaces, Phys. Rev. Lett. 54 (1985) 234-236.

DOI: 10.1103/physrevlett.54.234

[19] T.N. Sitenko, I.P. Tyagulskii, V.I. Lyashenko and V.S. Lysenko, Role of surface band bending in residual conductivity formation in epitaxial GaAs films, Physica Status Solidi (a) 30 (1975) 755-763.

DOI: 10.1002/pssa.2210300236

[20] B.I. Shklovkii and A.L. Efros, in: Electronic properties of Doped Semiconductors (Springer-Verlag, Heidelberg, 1984).

[21] A.A. Shklyaev, M. Ichikawa, Extremely dense arrays of germanium and silicon nanostructures, Physics Uspekhi 51 (2008) 133-162.