Undoped Diamond-Like Carbon Thin Films Grown by Direct Current-Plasma Enhanced Chemical Vapour Deposition: Structural and Electrical Properties

Jackie Chen Keng Yik; Karim bin Deraman; Ong Wai Kit; Wan Nurulhuda Wan Shamsuri; Rosli Hussin

doi:10.4028/www.scientific.net/AMR.970.136

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Surface Plasma Characterization of Polyimide Films for Flexible Electronics
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Undoped Diamond-Like Carbon Thin Films Grown by Direct Current-Plasma Enhanced Chemical Vapour Deposition: Structural and Electrical Properties
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 970Undoped Diamond-Like Carbon Thin Films Grown by...

Undoped Diamond-Like Carbon Thin Films Grown by Direct Current-Plasma Enhanced Chemical Vapour Deposition: Structural and Electrical Properties

Abstract:

Undoped diamond like carbon thin films have been grown by DC - PECVD system. The synthesis of the DLC films was carried out in the presence of gas of (CH₄ + H₂ + Ar) in a custom made reactor. The substrate temperature was initiated from the range of 300 °C to 600 °C under an optimum pressurized medium. The AFM image reveals that the optimization of DLC films growth at the substrate temperature 400 °C has a significant surface roughness and average grain size which is compatible to the result of film thickness measurement. The sample J400 shows an excellent nonlinear rectifying diode-like characteristic across the small potential difference.

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Periodical:

Advanced Materials Research (Volume 970)

Pages:

136-139

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.970.136

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Online since:

June 2014

Authors:

Jackie Chen Keng Yik*, Karim bin Deraman, Ong Wai Kit, Wan Nurulhuda Wan Shamsuri, Rosli Hussin

Keywords:

Amorphous Carbon, Diamond-Like Carbon (DLC), Direct Current-Plasma Enhanced Chemical Vapour Deposition, I-V Characteristic Measurement, Surface Roughness (SR)

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