Influence of Al2O3 Doping on the Microstructure and Current–Voltage Characteristics of ZnO-Based Linear Resistance Ceramics

Jian Feng Zhu; Yong Zhou; Hai Bo Yang; Fen Wang

doi:10.4028/www.scientific.net/KEM.480-481.556

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 480-481Influence of Al2O3 Doping on the Microstructure...

Influence of Al₂O₃ Doping on the Microstructure and Current–Voltage Characteristics of ZnO-Based Linear Resistance Ceramics

Abstract:

ZnO-based linear resistance ceramics were synthesized using Al2O3 doped ZnO-based system as raw materials by sintered at 1340 °C for 3 h. The effects of Al2O3 content ranged from 1 to 15 wt% on the microstructure and electrical properties of the ceramics were investigated in detail. The results show that the electrical properties such as nonlinear coefficient, resistivity and resistance temperature coefficient have been obviously influenced by Al2O3 doping. The optimal samples obtained by doping Al2O3 with 9 wt% have a nonlinear coefficient of 1.3, resistivity of 130 (Ω•cm) and resistance temperature coefficient of -5.4×10-3/ °C.