Co/Cu/Co Pseudo Spin-Valve System Prepared by Magnetron Sputtering with Different Argon Pressure

A.V. Svalov; A.N. Sorokin; P.A. Savin; Alfredo García-Arribas; A. Fernández; V.O. Vas’kovskiy; G.V. Kurlyandskaya

doi:10.4028/www.scientific.net/KEM.644.211

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 644Co/Cu/Co Pseudo Spin-Valve System Prepared by...

Co/Cu/Co Pseudo Spin-Valve System Prepared by Magnetron Sputtering with Different Argon Pressure

Abstract:

Thin Co films were fabricated by DC magnetron sputtering. The effect of argon pressure on the microstructure, surface morphology and magnetic properties of the samples was systematically studied. It was found that with the increase of argon pressure, the sharpness of the crystalline texture of the samples declines, the roughness of film surfaces and the coercivity of the films increase. Based on these results, a Co/Cu/Co pseudo spin-valve system was designed and the corresponding structures were fabricated. The difference in coercivity of magnetic layers was obtained by deposition of the Co layers at different Ar pressures. Change of the resistance of this trilayer is induced at a moderate field by the spin rotation in the soft layer with lower coercivity.

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Periodical:

Key Engineering Materials (Volume 644)

Pages:

211-214

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.644.211

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Cite this paper

Online since:

May 2015

Authors:

A.V. Svalov*, A.N. Sorokin, P.A. Savin, Alfredo García-Arribas, A. Fernández, V.O. Vas’kovskiy, G.V. Kurlyandskaya

Keywords:

Co Films, Coercive Force, Magnetoresistance, Magnetron Sputtering, Multilayers, Spin-Valve

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* - Corresponding Author

References

[1] M. Johnson (Editor): Magnetoelectronics (Academic Press, The Netherlands 2004).

Google Scholar

[2] P. Grünberg and R. Coehoorn, in: Magnetic Multilayers and Giant Magnetoresistance. Fundamentals and Industrial Applications, edited by U. Hartman (Springer-Verlag, Germany 2000).

Google Scholar

[3] M. Jergel, Y. Halahovets, P. Šiffalovič, K. Végsö, R. Senderák, E. Majková, Š. Luby: Thin Solid Films Vol. 520 (2011), p.667.

DOI: 10.1016/j.tsf.2011.08.068

Google Scholar

[4] A.V. Svalov, A. Fernández, M. Tejedor, G.V. Kurlyandskaya: Vacuum Vol. 81 (2007), p.1012.

Google Scholar

[5] A. Paul, T. Damm, D.E. Bürgler, S. Stein, H. Kohlstedt, and P. Grünberg: Appl. Phys. Lett. Vol. 82 (2003), p. (1905).

DOI: 10.1063/1.1563056

Google Scholar

[6] J.A. Thornton : J. Vac. Sci. Technol. Vol. 11 (1974), p.666.

Google Scholar

[7] A.V. Svalov, I.R. Aseguinolaza, A. García-Arribas, I. Orue, J.M. Barandiaran, J. Alonso, M.L. Fdez-Gubieda, G.V. Kurlyandskaya: IEEE Trans. Magn. Vol. 46 (2010), p.333.

DOI: 10.1109/tmag.2009.2032519

Google Scholar

[8] V.P. Nascimento, E.C. Passamani, A.D. Alvarenga, A. Biondo, F. Pelegrini, E. Baggio Saitovitch: Appl. Surf. Sci. 254 (2008), p.2114.

DOI: 10.1016/j.apsusc.2007.08.065

Google Scholar

[9] A.L. Patterson: Phys. Rev. Vol. 56 (1939), p.978.

Google Scholar

[10] F. Xu, Q. Huang, Z. Liao, S. Li, and C. K. Ong: J. Appl. Phys. 111 (2012), 07A304.

Google Scholar

[11] A.V. Svalov, P.A. Savin, G.V. Kurlyandskaya, J. Gutiérrez, J.M. Barandiarán and V.O. Vas'kovskiy: IEEE Trans. Magn. Vol. 38 (2002), p.2782.

Google Scholar