Paper Titles

Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals
p.1713

Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals
p.1719

Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers
p.1725

Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
p.1731

Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers
p.1737

Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal
p.1743

Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si
p.1749

Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques
p.1755

Microdefects in Nitrogen Doped FZ Silicon Revealed by Li⁺ Drifting
p.1761

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Genration of Oxidation Induced Stacking Faults in...

Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1737-1742

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1737

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Cite this paper

Online since:

November 1995

Authors:

Koji Sueoka, M. Akatsuka, K. Nishihara, T. Yamamoto, S. Kobayashi

Keywords:

Czochralski Silicon, Dislocation, Free Energy, Oxidation Induced Stacking Fault, Oxide Precipitate

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