Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor
p.1085
p.1085
Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material
p.1089
p.1089
SiC-Based Schottky Diode Gas Sensors
p.1093
p.1093
Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes
p.1097
p.1097
High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines
p.1101
p.1101
Growth of Bulk GaN by Sublimation Method
p.1107
p.1107
Growth and Characterization of Thin Films and Patterned Substrates of III-V Nitrides on SiC (0001) Substrates
p.1111
p.1111
Heteroepitaxy of Group III Nitrides for Device Applications
p.1115
p.1115
HVPE GaN and AIGaN 'Substrates' for Homoepitaxy
p.1121
p.1121
High Temperature Piezoresistive β-SiC-on-SOI Pressure Sensor for Combustion Engines
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
1101-1106
Citation:
Online since:
February 1998
Keywords:
Price:
Permissions: