Surface Micromachining of Polycrystalline SiC Deposited on SiO2 by APCVD
p.885
p.885
Behaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated Temperatures
p.889
p.889
Recent Advances in SiC Power Devices
p.895
p.895
Vital Issues for SiC Power Devices
p.901
p.901
Silicon Carbide High Frequency Devices
p.907
p.907
Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors
p.913
p.913
Electrothermal Simulation of 4H-SiC Power Devices
p.917
p.917
High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
p.921
p.921
6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method
p.925
p.925
Silicon Carbide High Frequency Devices
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
907-912
Citation:
Online since:
February 1998
Authors:
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