4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
p.185
p.185
4H-SiC (11-20) Epitaxial Growth
p.189
p.189
Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres
p.193
p.193
Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
p.197
p.197
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
p.201
p.201
Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC
p.205
p.205
Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes
p.209
p.209
Mechanisms of SiC(111) Step Flow Growth
p.213
p.213
Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
p.217
p.217
Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
201-204
Citation:
Online since:
May 2000
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