Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
p.51
p.51
Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC
p.55
p.55
Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
p.59
p.59
Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
p.63
p.63
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
p.67
p.67
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
p.71
p.71
SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
p.75
p.75
Role of Temperature Gradient in Bulk Crystal Growth of SiC
p.79
p.79
Pressure Effect in Sublimation Growth of Bulk SiC
p.83
p.83
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
67-70
Citation:
Online since:
May 2000
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