Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide
p.63
p.63
Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT
p.67
p.67
Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation
p.71
p.71
SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique
p.75
p.75
Role of Temperature Gradient in Bulk Crystal Growth of SiC
p.79
p.79
Pressure Effect in Sublimation Growth of Bulk SiC
p.83
p.83
Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT
p.87
p.87
Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics
p.91
p.91
Considerations on the Crystal Morphology in the Sublimation Growth of SiC
p.95
p.95
Role of Temperature Gradient in Bulk Crystal Growth of SiC
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 338-342)
Pages:
79-82
Citation:
Online since:
May 2000
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