Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques
p.157
p.157
Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces
p.163
p.163
Step Free Surface Heteroepitaxy of 3C-SiC Layers on Patterned 4H/6H-SiC Mesas and Cantilevers
p.169
p.169
Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
p.175
p.175
Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
p.181
p.181
Selective Growth of 4H-SiC on 4H-SiC Substrates using a High Temperature Mask
p.185
p.185
Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition
p.189
p.189
Homoepitaxial On-Axis Growth of 4H- and 6H-SiC by CVD
p.193
p.193
High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face
p.197
p.197
Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
181-184
Citation:
Online since:
June 2004
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