Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

H. Fujiwara; Tsunenobu Kimoto; T. Tojo; Hiroyuki Matsunami

doi:10.4028/www.scientific.net/MSF.483-485.151

Paper Titles

LPE of Silicon Carbide Using Diluted Si-Ge Flux
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Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor
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Epitaxial Growth of n-Type 4H-SiC on 3" Wafers for Power Devices
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Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
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Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes
p.151

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices
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Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial Growth
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Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC
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Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Reduction of Stacking Faults in Fast Epitaxial...

Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky Diodes

Abstract:

Generation of stacking faults (SFs) in fast epitaxial growth of 4H-SiC(0001) has been reduced in vertical hot-wall chemical vapor deposition (CVD). 52 µm-thick epilayers with and without SFs are used to investigate impacts of SFs on the performance of Schottky barrier diodes (SBDs). The density, shape and structure of stacking faults have been characterized by cathodeluminescence (CL), photoluminescence (PL) and high-resolution transmission electron microscopy (HR-TEM). These analyses indicate that most (> 75 %) SFs with an 8H structure are generated near the epilayer/substrate interface during CVD. It is also revealed that the SFs cause the lowering of Schottky barrier height as well as the decrease of breakdown voltage.

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

151-154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.151

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Online since:

May 2005

Authors:

H. Fujiwara, Tsunenobu Kimoto, T. Tojo, Hiroyuki Matsunami

Keywords:

Cathodeluminescence, Fast Epitaxy, Photoluminescence (PL), Schottky Diode, Stacking Fault

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