Analysis of SiC Islands Formation during First Steps of Si Carbonization Process

David Méndez; A. Aouni; Daniel Araujo; Etienne Bustarret; Gabriel Ferro; Yves Monteil

doi:10.4028/www.scientific.net/MSF.483-485.555

Paper Titles

Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation
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First Principles Simulations of SiC-Based Interfaces
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Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)
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Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity Inversion
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Analysis of SiC Islands Formation during First Steps of Si Carbonization Process
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ALD Deposited Al₂ O₃ Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere
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SiC/SiO₂ Interface States: Properties and Models
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The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO₂ Defects
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Interface States in SiO₂/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom Termination
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HomeMaterials Science ForumMaterials Science Forum Vols. 483-485Analysis of SiC Islands Formation during First...

Analysis of SiC Islands Formation during First Steps of Si Carbonization Process

Abstract:

The effect of the temperature at which the carbon source is introduced in the reactor on the early stages of the carbonization process is analyzed here. Three samples heated up to 1150°C with propane introduction temperatures (Tintro) of 725, 1030 and 1100°C are analyzed by transmission electron microscopy and attenuated total reflectance. The size of the SiC nuclei increases with Tintro. There is also an effect on the strain of the resulting carbonization layer. The electron diffraction pattern of the sample with the highest Tintro shows a fully relaxed 3C-SiC layer, while no evidence of SiC relaxation is present in low Tintro samples where the SiC islands seems to be pseudomorphic.

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Silicon Carbide and Related Materials 2004

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Periodical:

Materials Science Forum (Volumes 483-485)

Pages:

555-558

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.483-485.555

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Online since:

May 2005

Authors:

David Méndez, A. Aouni, Daniel Araujo, Etienne Bustarret, Gabriel Ferro, Yves Monteil

Keywords:

ATR, Si Carbonisation , Strain, TEM

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