Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields
p.965
p.965
8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation
p.969
p.969
Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
p.973
p.973
Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV
p.977
p.977
Demonstration of High-Power X-Band Oscillation in p+/n-/n+ 4H-SiC IMPATT Diodes with Guard-Ring Termination
p.981
p.981
Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation
p.985
p.985
Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
p.989
p.989
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
p.993
p.993
Investigation of Microwave Switching 4HSiC pin Diodes in the 20-500 °C Temperature Range
p.997
p.997
Demonstration of High-Power X-Band Oscillation in p+/n-/n+ 4H-SiC IMPATT Diodes with Guard-Ring Termination
Abstract:
We fabricated a p+/n-/n+ 4H-SiC IMPATT diode with guard-ring termination. The p+ - layer and the guard-ring were formed by ion implantation. The diode showed abrupt avalanche breakdown characteristics and we obtained a peak output power of 1.8 W at 11.93 GHz, which is the highest peak output power ever for the SiC IMPATT diodes in X-band.
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Info:
Periodical:
Materials Science Forum (Volumes 483-485)
Pages:
981-984
Citation:
Online since:
May 2005
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