Paper Titles

On the Viability of Au/3C-SiC Schottky Barrier Diodes
p.677

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
p.681

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
p.685

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
p.689

The Limits of Post Oxidation Annealing in NO
p.693

Electrical Activation of B⁺-Ions Implanted into 4H-SiC
p.697

Manganese in 4H-SiC
p.701

Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
p.705

Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
p.709

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648The Limits of Post Oxidation Annealing in NO

The Limits of Post Oxidation Annealing in NO

Article Preview

Abstract:

We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

693-696

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.693

Citation:

Cite this paper

Online since:

April 2010

Authors:

John Rozen, Xing Guang Zhu, Ayayi Claude Ahyi, John R. Williams, Leonard C. Feldman

Keywords:

Charge Trapping, Interface Trap, Nitridation, Reliability

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

[1] H. Li, S. Dimitrijev, H. B. Harrison, and D. Sweatman, Appl. Phys. Lett. Vol. 70 (1997), p. (2028).

[2] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. D. Ventra, S. T. Pantelides, L. C. Feldman, and R. A. Weller, Appl. Phys. Lett. Vol. 76 (2000), p.1713.

[3] J. Rozen, S. Dhar, M. E. Zvanut, J. R. Williams, and L. C. Feldman, J. Appl. Phys. 105 (2009), 124506.

[4] J. Rozen, S. Dhar, S. T. Pantelides, L. C. Feldman, S. Wang, J. R. Williams, and V. V. Afanas'ev, Appl. Phys. Lett. Vol. 91 (2007), 153503.

[5] J. Rozen, S. Dhar, S. K. Dixit, V. V. Afanas'ev, F. O. Roberts, H. L. Dang, S. Wang, S. T. Pantelides, J. R. Williams, and L. C. Feldman, J. Appl. Phys. Vol. 103 (2008), 124513.

[6] S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, Microelectron. Reliab. Vol. 45 (2005), p.19.

[7] J. Rozen, A. C. Ahyi, X. Zhu, J. R. Williams, and L. C. Feldman, submitted to IEEE Electron. Dev. Lett.

[8] E. Arnold and D. Alok, IEEE Trans. Electron Dev. Vol. 48 (2001), p.1870.

[9] V. Tilak, K. Matocha, and G. Dunne, IEEE Trans. Electron Dev. Vol. 54 (2007), p.2823.

[10] A. Poggi, F. Moscatelli, S. Solmi, and R. Nipoti, IEEE Trans. Electron Dev. Vol. 55 (2008), p. (2021).

[11] T. L. Biggerstaff, C. L. Reynolds, Jr., T. Zheleva, A. Lelis, D. Habersat, S. Haney, S. -H. Ryu, A. Agarwal, and G. Duscher, Appl. Phys. Lett. Vol. 95 (2009), p.032108.

DOI: 10.1063/1.3144272

[12] E. A. Ray, J. Rozen, S. Dhar, J. R. Williams, and L. C. Feldman, J. Appl. Phys. 103 (2008), 023522.

[13] T. Hori, IEEE Trans. Electron Dev. Vol. 37 (1990), p. (2058).

[14] T. Shirasawa et al., Phys. Rev. B Vol. 79 (2009), 241301(R).

[15] H. Yano, Y. Furumoto, T. Niwa, T. Hatayama, Y. Uraoka, and T. Fukui, Mater. Sci. Forum Vol. 457 (2004), p.1333.

[16] X. Zhu, Ph.D. thesis, Auburn University, (2008).

[17] K. McDonald, M. B. Huang, R. A. Weller, L. C. Feldman, J. R. Williams, F. C. Stedile, I. J. R. Baumvol, and C. Radtke, Appl. Phys. Lett. Vol. 76 (2000), p.568.

DOI: 10.1063/1.125819