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HomeMaterials Science ForumMaterials Science Forum Vols. 702-703Epitaxial Growth of α-Fe2O3 Thin Films on c-Plane...

Epitaxial Growth of α-Fe₂O₃ Thin Films on c-Plane Sapphire Substrate by Hydrothermal Method

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Abstract:

Thin films of hematite find extensive applications in photoelectrochemistry, photocatalysis, and gas sensors. c-axis oriented hematite films have been directly grown on c-plane sapphire substrate using chemical method via hydrolysis of ferric cations. X-ray diffraction (XRD) reveals that the crystalline phases of the films and corresponding sediment produced in the solution were α-Fe₂O₃ and pure β-FeOOH, demonstrating the promotion of nucleation of hematite on sapphire substrate as a result of lowered interface energy. Phi-scan results indicate that the hematite films are grown with (0001) planes parallel to c-plane of Al₂O₃. Scanning electron microscopic observation shows that the hematite films are composed of pyramid-shaped nanocrystals with smooth surface facets.

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Textures of Materials - ICOTOM 16

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Periodical:

Materials Science Forum (Volumes 702-703)

Pages:

999-1002

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.702-703.999

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Online since:

December 2011

Authors:

Song Li, Gao Wu Qin, Liang Zuo

Keywords:

Epitaxial Film, Hydrothermal Growth, Iron Oxide

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