Packaging Technologies for 500°C SiC Electronics and Sensors

Liang Yu Chen; R. Wayne Johnson; Philip G. Neudeck; Glenn M. Beheim; David J. Spry; Roger D. Meredith; Gary Hunter

doi:10.4028/www.scientific.net/MSF.717-720.1033

Paper Titles

Demonstration of SiC Vertical Trench JFET Reliability
p.1017

Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing
p.1021

Avalanche Breakdown Energy in Silicon Carbide Junction Field Effect Transistors
p.1025

Characterization of SiC JFET in Novel Packaging for 1 MHz Operation
p.1029

Packaging Technologies for 500°C SiC Electronics and Sensors
p.1033

High Voltage SiC Vertical JFET for High Power RF Applications
p.1037

Design of an Integrated SiC JFET Power Switch and Flyback Diode
p.1041

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA
p.1045

Fabrication Issues of 4H-SiC Static Induction Transistors
p.1049

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Packaging Technologies for 500°C SiC Electronics...

Packaging Technologies for 500°C SiC Electronics and Sensors

Abstract:

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500°C silicon carbide (SiC) electronics and sensors, and test results of packaged SiC JFETs and capacitive pressure sensors at 500°C.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2011

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

1033-1036

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.1033

Citation:

Cite this paper

Online since:

May 2012

Authors:

Liang Yu Chen, R. Wayne Johnson, Philip G. Neudeck, Glenn M. Beheim, David J. Spry, Roger D. Meredith, Gary Hunter

Keywords:

Electronics, High-Temperature, Packaging, Sensor, Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] L.-Y. Chen and G.W. Hunter, Temperature Dependent Dielectric Properties of Polycrystalline 96%Al2O3 Substrate, Proc. Symposium G, MRS Fall Meeting, Boston, MA, 2004. b

Google Scholar

[2] J.S. Salmon, R.W. Johnson, and M. Palmer, Thick Film Hybrid Packaging Techniques for 500°C Operation, in Trans. Fourth Int. Conf. HiTEC, Albuquerque, NM, 1998.

DOI: 10.1109/hitec.1998.676769

Google Scholar

[3] L.-Y Chen. and J.-F. Lei, Packaging of Harsh – Environment MEMS Devices (Chapter 12), in: M. Gad-el-Hak (Eds), MEMS Design and Fabrication, The MEMS Handbook (2nd Edition), CRC Press, Boca Raton, LA, 2006. Figure 5: The parasitic capacitance (a) and parallel conductance (b) of the sensor package with Lava sealant [9]. The package was characterized at 1 atm.

DOI: 10.1201/9781420050905.ch23

Google Scholar

[4] L.-Y. Chen and G.W. Hunter, Al2O3 and AlN Ceramic Chip-level Packages for 500°C Operation, in Proceedings of High Temperature Electronics Network (HiTEN), Paris, France, 2005.

Google Scholar

[5] P. Hagler, R.W. Johnson, and L.-Y. Chen, SiC Die Attach Metallurgy and Processes for Applications up to 500°C, IEEE Trans. on Components, Packaging and Manufacturing Technology, Vol. 1, Issue: 4 (2011) 630 - 639.

DOI: 10.1109/tcpmt.2011.2106160

Google Scholar

[6] L.-Y. Chen, D.J. Spry, and P.G. Neudeck, Demonstration of 500°C AC Amplifier Based on SiC MESFET and Ceramic Packaging, in Proc. Int. Conf. HiTEC, Santa Fe, NM (2006) 240.

Google Scholar

[7] P.G. Neudeck et al, Extreme Temperature 6H-SiC JFET Integrated Circuit Technology, Phys. Status Solidi A 206, No. 10, (2009) 2332. Figure 6: The test results of the packaged high temperature SiC capacitive pressure sensor at room temperature and 500°C after overnight heat treatment at 500°C. Lava sealant is used for packaging. The packaging parasitic capacitances have been subtracted [9].

DOI: 10.1002/pssa.200925188

Google Scholar

[8] L.-Y. Chen, Improvement of Dielectric Performance of a Prototype AlN High Temperature Chip - level Package, in Proc. HiTEN, Oxford, England, 2011.

DOI: 10.4071/hiten-paper3-lchen

Google Scholar

[9] L.-Y. Chen, G.M. Beheim, and R.D. Meredith, Packaging Technology for High Temperature Capacitive Pressure Sensors, in Proc. Int. Conf. HiTEC, Santa Fe, NM, 2006.

DOI: 10.4071/hitec-lchen-tha23

Google Scholar

[10] J.C. Xu, G.W. Hunter et al, Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging, in Proc. ICSCRM, Cleveland, Ohio, 2011.

Google Scholar