Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt

Hironori Daikoku; M. Kado; H. Sakamoto; Hiroshi Suzuki; T. Bessho; K. Kusunoki; N. Yashiro; N. Okada; K. Moriguchi; K. Kamei

doi:10.4028/www.scientific.net/MSF.717-720.61

Paper Titles

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution
p.45

SiC Growth by Solvent-Laser Heated Floating Zone
p.49

Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth
p.53

Control of Void Formation in 4H-SiC Solution Growth
p.57

Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt
p.61

Growth of a Thick 2H-SiC Layer in Si-Li Solution under a Continuous CH₄ Flow
p.65

Growth Rate Prediction in SiC Solution Growth Using Silicon as Solvent
p.69

SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
p.75

Growth of 4H-SiC Epilayers and Z_1/2 Center Elimination
p.81

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720Top-Seeded Solution Growth of 4H-SiC Bulk Crystal...

Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt

Abstract:

We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from −22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.