SiC Power Devices as Enabler for High Power Density - Aspects and Prospects

Peter Friedrichs

doi:10.4028/www.scientific.net/MSF.778-780.1104

Paper Titles

High-Efficiency Power Conversion Using Silicon Carbide Power Electronics
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Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings
p.1089

SiC Power Module for Compact Power Conversion Equipment
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Inverter-Rectifier Using SiC Power Devices for Bidirectional Wireless Power Transfer System of Electric Vehicles
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SiC Power Devices as Enabler for High Power Density - Aspects and Prospects
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High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
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Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices
p.1114

Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device Packages
p.1118

SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power Devices
p.1122

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780SiC Power Devices as Enabler for High Power...

SiC Power Devices as Enabler for High Power Density - Aspects and Prospects

Abstract:

Comparable to silicon the main way to improve the cost performance of SiC power devices is to go up with current density since the main selling point of a power device is its current handling capability. To follow this path successfully a couple of application and system relevant aspects should be taken into account beside the pure focus on reducing nominal or absolute losses at chip level. This paper will address some of those topics in combination with discussing state of the art device technologies on SiC. Also some considerations regarding the operation of SiC devices at elevated temperatures will be given, mainly targeting for increased power density and reduced losses in power electronic systems.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1104-1109

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1104

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Online since:

February 2014

Authors:

Peter Friedrichs*

Keywords:

Current Density, High-Temperature, Power Density, Silicon Carbide (SiC)

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* - Corresponding Author

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