Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
p.61
p.61
Effect of Solution Drift on Crystalline Morphology in the Solution Growth of Off-Axis 4H-SiC Crystals
p.65
p.65
Effects of Hydrogen Concentration on the Growth of High Purity 4H-SiC Single Crystal Grown by Sublimation Method
p.69
p.69
Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals
p.73
p.73
Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
p.77
p.77
Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
p.81
p.81
Influence of Impurities in SiC Powder on High Quality SiC Crystal Growth
p.85
p.85
Physical Vapor Growth of Double Position Boundary Free, Quasi-Bulk 3C-SiC on High Quality 3C-SiC on Si CVD Templates
p.89
p.89
Stress in SiC Single Crystal Caused by the Difference of CTE of SiC Seed and Graphite Holder and Role of the Elastic Moduli
p.93
p.93
Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
Abstract:
Low resistivity p-type SiC bulk crystals were grown by the sublimation method with using aluminum and nitrogen co-doping. In the sublimation growth of 4H-SiC, to obtain low-resistive p-type crystals are not easy because of the instability of 4H-SiC polytype with highly Al-doping. We have grown < 90 mΩcm p-type 4H-SiC bulk crystals with the co-doping condition. The results of SIMS and Raman spectroscopy show that high concentration of nitrogen co-doping could be effective to the stabilization of 4H polytype with p-type SiC growth.
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Info:
Periodical:
Materials Science Forum (Volume 858)
Pages:
77-80
Citation:
Online since:
May 2016
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