Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light

Yi Fan Jia; Hong Liang Lv; Xiao Yan Tang; Qing Wen Song; Yi Men Zhang; Yu Ming Zhang

doi:10.4028/www.scientific.net/MSF.924.449

Paper Titles

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Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment
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Isotropic Oxidation by Plasma Oxidation and Investigation of RIE Induced Effects for Development of 4H-SiC Trench MOSFETs
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Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light
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Oxygen Pressure Controlled Oxidation for Gate Insulator Process of SiC MOSFETs
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Effects of CF₄ Surface Etching on 4H-SiC MOS Capacitors
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HomeMaterials Science ForumMaterials Science Forum Vol. 924Study on NO Passivation on the Near Interface...

Study on NO Passivation on the Near Interface Electron and Hole Traps of n-Type 4H-SiC MOS Capacitors by Ultraviolet Light

Abstract:

The characteristics of near interface electron and hole traps in n-type 4H-SiC MOS capacitors with and without nitric oxide (NO) passivation have been systematically investigated. The hysteresis of the bidirectional capacitance-voltage (C-V) and the shift of flat band voltage (V_fb) caused by bias stress (BS) with and without ultraviolet light (UVL) irradiation are used for studying the influence of near interface electron traps (NIETs) and near interface hole traps (NIHTs). Compared with Ar annealed process, NO passivation can effectively reduce the density of NIETs, but induce excess NIHTs in the SiC MOS devices. What’s worse is that part of the trapped hole cannot be released easily from the NIHTs in the NO annealed sample, which may act as the positive fixed charge and induce the negative shift of threshold voltage.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

449-452

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.449

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Online since:

June 2018

Authors:

Yi Fan Jia, Hong Liang Lv, Xiao Yan Tang*, Qing Wen Song, Yi Men Zhang, Yu Ming Zhang

Keywords:

4H-SiC MOS Capacitors, Near Interface Electron Traps, Near Interface Hole Traps, NO Passivation

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