Internal Dissolution of Buried Oxide in SOI Wafers

Oleg Kononchuk; Francois Boedt; Frederic Allibert

doi:10.4028/www.scientific.net/SSP.131-133.113

Paper Titles

Configuration of DV Complexes In Ge: Positron Probing of Ion Cores
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Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p⁺/n Si_1-XGe_x Source/Drain Junctions
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Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium
p.101

Co-Germanide Schottky Contacts on Ge
p.107

Internal Dissolution of Buried Oxide in SOI Wafers
p.113

Degradation and their Recovery Behavior of Irradiated GaAlAs LEDs
p.119

Vacancy Clusters in Germanium
p.125

Formation of Hydrogen-Related Shallow Donors in Ge_1-xSi_x Crystals Implanted with Protons
p.131

Crystallization of InSb Phase Near the Bonding Interface of Silicon-on-Insulator Structure
p.137

HomeSolid State PhenomenaSolid State Phenomena Vols. 131-133Internal Dissolution of Buried Oxide in SOI Wafers

Internal Dissolution of Buried Oxide in SOI Wafers

Abstract:

High temperature anneal of SOI wafers in oxygen-free atmosphere results in internal buried oxide dissolution and top Si layer etching. Dissolution rate is determined by interstitial oxygen diffusion through the top Si layer and evaporation from the top Si surface in the form of SiO. It has been observed that kinetics of the process follows linear-parabolic law. Simple thermodynamic model is proposed, which explains observed dependences on temperature and top Si layer thickness.

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Periodical:

Solid State Phenomena (Volumes 131-133)

Pages:

113-118

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.131-133.113

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Online since:

October 2007

Authors:

Oleg Kononchuk, Francois Boedt, Frederic Allibert

Keywords:

Oxide Dissolution, Oxygen Transport, Silicon-on-Insulator (SOI)

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