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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 276Polysilicon on Insulator Structures for Sensor...

Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields

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Abstract:

The effects of high energy electron irradiation and high magnetic fields (up to 14 T) on the electrical characteristics of recrystallized p-type polysilicon-on-insulator layers were studied. The aim of the paper is to obtain the material suitable to create the sensors operating in harsh conditions.

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Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices

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Periodical:

Advanced Materials Research (Volume 276)

Pages:

109-116

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.276.109

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Online since:

July 2011

Authors:

Anatoly Druzhinin, Inna Marymova, Igor Kogut, Yuriy Khoverko

Keywords:

Electron Irradiation, Magnetoresistivity MR, Polysilicon-on-Insulator, Sensor, SOI-Structures

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