Abstract
We report the correlation between the crystallinity of ingots grown by the directional solidification technique and the residual strain and dislocation distribution. It was found that mono-like ingots have a 20–25% higher averaged residual strain than multicrystalline Si ingots grown under the same conditions. However the existence of local high-strained areas, which were frequently found in multicrystalline Si ingots, is reduced in mono-like Si ingots. In addition, a reduction in dislocation density was observed. This effect and the decrease in local high strain could be attributed to the decrease in grain boundaries in the mono-like ingots.