Charge-Sensitive Infrared Phototransistors Developed in the Wavelength Range of 10–50 µm

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Published 7 February 2011 • Copyright (c) 2011 The Japan Society of Applied Physics
, , Citation Takeji Ueda et al 2011 Jpn. J. Appl. Phys. 50 020208 DOI 10.1143/JJAP.50.020208

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Author affiliations

1 Department of Basic Science, The University of Tokyo, Meguro, Tokyo 153-8902, Japan

2 CREST, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan

3 Department of Computer Science and Electrical Engineering, Kumamoto University, Kumamoto 860-8555, Japan

4 Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

Dates

  1. Received 29 November 2010
  2. Accepted 1 December 2010
  3. Published

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Abstract

Charge-sensitive infrared phototransistors (CSIPs) have been developed in a wavelength range of 12 to 45 µm by using double-quantum-well GaAs/AlGaAs heterostructures. Important parameters for designing the devices are discussed. The detectors are operated at 4.2 K. Quantum efficiency is affected by the crystal quality, which is supposed to be primarily determined by the imperfection in barrier regions. The specific detectivity, substantially determined by the quantum efficiency, is in the range of D* = 1012–1016 cm Hz1/2/W.

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10.1143/JJAP.50.020208