Abstract
We have investigated annealing effects on Ge/SiO2 interfaces in wafer-bonded germanium-on-insulator substrates using transmission electron microscopy and electron energy loss spectroscopy. A number of nanometer-sized hollows were observed at the Ge/SiO2 interfaces after annealing at 500 and 600 °C, while the density of these hollows was very small after annealing at 700 and 800 °C. The hollows are attributed to the formation of amorphous oxides of Si-rich Si1-xGexO2. The mechanism for the formation and disappearance of these amorphous hollows on the Ge substrates is discussed.
Export citation and abstract BibTeX RIS