Abstract
We report the demonstration of a N-polar InGaN based green light emitting diode (LED) grown by N2 plasma-assisted molecular beam epitaxy (PAMBE). High quality multiple quantum well LEDs with In0.29Ga0.71N quantum wells were grown at a temperature of 600 °C by applying a new growth model. LED structures exhibited green emission, and electroluminescence measurements on the test structure showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm2. This work is the first demonstration of an N-polar LED with emission in the green wavelength range.