Annealing Temperature Dependence of Properties of Cu2ZnSnS4 Thin Films Prepared by Sol–Gel Sulfurization Method

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Published 20 May 2011 Copyright (c) 2011 The Japan Society of Applied Physics
, , Citation Kazuya Maeda et al 2011 Jpn. J. Appl. Phys. 50 05FB08 DOI 10.1143/JJAP.50.05FB08

1347-4065/50/5S2/05FB08

Abstract

Cu2ZnSnS4 (CZTS) thin films were fabricated by a sol–gel sulfurization method with a rapid thermal process. The films preheated at 250 °C for 1 h and sulfurized from 350 to 600 °C for 1 h were investigated. The chemical composition of sulfur was 40% for the preheated film and 50% for the films sulfurized at temperatures higher than 400 °C. The grain size of the films markedly increased with increasing sulfurization temperature from 400 to 450 °C and that of the films sulfurized at temperatures higher than 450 °C was ∼2 µm. The preheated film and the films sulfurized at temperatures lower than 400 °C were composed of CuxS and CZTS. The CuxS phase was eliminated from the CZTS films by sulfurization at temperatures higher than 500 °C.

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10.1143/JJAP.50.05FB08