Optimisation of Coupling between Photonic Crystal and Active Elements in an Epitaxially Regrown GaAs Based Photonic Crystal Surface Emitting Laser

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Published 20 February 2012 • Copyright (c) 2012 The Japan Society of Applied Physics
, , Citation David M. Williams et al 2012 Jpn. J. Appl. Phys. 51 02BG05 DOI 10.1143/JJAP.51.02BG05

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1 Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom

2 EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Centre for Nanoscience and Technology, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom

3 NIMS Nanotechnology Innovation Center, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0047, Japan

Dates

  1. Received 25 September 2011
  2. Accepted 4 November 2011
  3. Published

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Abstract

The waveguide design of a GaAs based, epitaxially regrown photonic crystal surface emitting laser is discussed so as to optimise the coupling of the photonic crystal and the mode overlap with the quantum wells. Design criteria include the positioning of the quantum well and the photonic crystal layers, and the effect of varying aluminium composition in the lower cladding layer. Room-temperature, pulsed laser oscillation is demonstrated.

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10.1143/JJAP.51.02BG05