Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Bücher
Zeitschriften
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
SLX-Digitalkonferenz: Zukunftswerkstatt 2024

Mehr Umsatz mit Top-Kontakten

Am 7. Mai erfahren Sie, wie Vertriebsteams Leadgenerierung, Leadnurturing und Leadstrategien effizient steuern können.
Erweiterte Suche
Anmelden
nach oben
Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 3/2019

11.05.2019

Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies

verfasst von: Karri Babu Ravi Teja, Navneet Gupta

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2019

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Performance parameters of an organic thin-film transistor (OTFT) and their relation to the material parameters of the gate dielectric are analyzed. Based on the analysis, the surface energy, dielectric constant, glass-transition temperature, and breakdown field are identified as key parameters. Various multicriteria decision-making approaches, viz. multiobjective optimization using simple ratio analysis (MOOSRA), technique for order preference by similarity to ideal solution (TOPSIS) and Vlsekriterijumska Optimizacija I KOmpromisno Resenje (VIKOR), are used to solve the material selection problem. Various low-k polymers are analyzed, and it is observed that CYTOP is a promising gate dielectric material for OTFTs, with good agreement between the MOOSRA, VIKOR, and TOPSIS regarding this choice.
Vorheriger Artikel Electrostatically doped drain junctionless transistor for low-power applications
Nächster Artikel Two-dimensional model for double-gate LDMOSFET devices

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
1.
Cantatore, E., et al.: A 13.56-MHz RFID system based on organic transponders. IEEE J. Solid State Circuits 42, 84–92 (2007)CrossRef
2.
Sokolov, A.N., Tee, B.C.K., Bettinger, C.J., Tok, J.B.H., Bao, Z.: Chemical and engineering approaches to enable organic field-effect transistor for electronic skin applications. Acc. Chem. Res. 45, 361–371 (2012)CrossRef
3.
Kelley, T.W., et al.: Recent progress in organic electronics: materials, devices, and processes. Chem. Mater. 16, 4413–4422 (2004)CrossRef
4.
Dimitrakopoulos, C.D., Malenfant, P.R.L.: Organic thin film transistors for large area electronics. Adv. Mater. 14, 99–117 (2002)CrossRef
5.
Jang, J., Han, S.H.: High-performance OTFT and its application. Curr. Appl. Phys. 6, 17–21 (2006)CrossRef
6.
Klauk, H.: Organic thin-film transistors. Chem. Soc. Rev. 39, 2643–2666 (2010)CrossRef
7.
Reese, C., Roberts, M., Ling, M., Bao, Z.: Organic thin film transistors. Mater. Today 7, 20–27 (2004)CrossRef
8.
Ryu, G.S., Kim, J.S., Jeong, S.H., Song, C.K.: A printed OTFT-backplane for AMOLED display. Org. Electron. Phys. Mater. Appl. 14, 1218–1224 (2013)
9.
Shim, C., Maruoka, F., Hattori, R.: Structural analysis on organic thin-film transistor with device simulation. IEEE Trans. Electron Devices 57, 195–200 (2010)CrossRef
10.
Wondmagegn, W., Pieper, R.: Simulation of top-contact pentacene thin film transistor. J. Comput. Electron. 8, 19–24 (2009)CrossRef
11.
Gundlach, D.J., Zhou, L., Nichols, J.A., Jackson, T.N., Necliudov, P.V., Shur, M.S.: An experimental study of contact effects in organic thin film transistors. J. Appl. Phys. 100, 245091–13 (2006)CrossRef
12.
Ortiz, P., Facchetti, A., Marks, T.J.: High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors. Chem. Rev. 110, 205–239 (2010)CrossRef
13.
Shang, L., et al.: Threshold voltage tuning of low-voltage organic thin-film transistors. IEEE Trans. Electron Devices 58, 2127–2134 (2011)CrossRef
14.
Bartic, C., Jansen, H., Campitelli, A., Borghs, S.: Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors. Org. Electron. 3, 65–72 (2002)CrossRef
15.
Dimitrakopoulos, C.D.: Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators. Science 283, 822–824 (1999)CrossRef
16.
Tang, W.M., Helander, M.G., Greiner, M.T., Lu, Z.H., Ng, W.T.: Improved characteristics of OTFT with HfO2 gate dielectric by using chlorinated indium tin oxide gate electrode. In: IEEE International Conference on Electronic Devices and Solid State Circuits (EDSSC), pp. 0–3 (2016)
17.
Han, C.Y., Tang, W.M., Leung, C.H., Che, C., Lai, P.T., Member, S.: A study on La incorporation in transition-metal (Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor. IEEE Trans. Electron Devices 62, 2313–2319 (2015)CrossRef
18.
Facchetti, A., Yoon, M.-H., Marks, T.J.: Gate dielectrics for organic field-effect transistors: new opportunities for organic electronics. Adv. Mater. 17, 1705–1725 (2005)CrossRef
19.
Harima, Y., Kubota, K., Ishiguro, Y., Ooyama, Y., Imae, I.: Electrical characteristics of pentacene films on cross-linked polymeric insulators of varying thicknesses. ACS Omega 1, 784–788 (2016)CrossRef
20.
Feng, L., Cui, Q., Zhao, J., Tang, W., Guo, X.: Dual-Vth low-voltage solution processed organic thin-film transistors with a thick polymer dielectric layer. IEEE Trans. Electron Devices 61, 2220–2223 (2014)CrossRef
21.
Kim, J., et al.: Characteristics of pentacene with different polymer gate insulators for organic thin-film transistors. Solid State Phenom. 124, 451–454 (2007)CrossRef
22.
Kalb, W.L., Mathis, T., Haas, S., Stassen, A.F., Batlogg, B.: Organic small molecule field-effect transistors with Cytop gate dielectric: eliminating gate bias stress effects. Appl. Phys. Lett. 90, 88–91 (2007)CrossRef
23.
Cheng, X., et al.: Air stable cross-linked cytop ultrathin gate dielectric for high yield low-voltage top-gate organic field-effect transistors. Chem. Mater. 22, 1559–1566 (2010)CrossRef
24.
Gross, S., Camozzo, D., Di Noto, V., Armelao, L., Tondello, E.: PMMA: a key macromolecular component for dielectric low-k hybrid inorganic–organic polymer films. Eur. Polym. J. 43, 673–696 (2007)CrossRef
25.
Estrada, M., Mejia, I., Cerdeira, A., Iñiguez, B.: MIS polymeric structures and OTFTs using PMMA on P3HT layers. Solid State Electron. 52, 53–59 (2008)CrossRef
26.
Ng, T.N., Daniel, J.H., Sambandan, S., Arias, A.-C., Chabinyc, M.L., Street, R.A.: Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors. J. Appl. Phys. 103, 44506 (2008)CrossRef
27.
Haas, U., et al.: Hybrid polymers as tunable and directly-patternable gate dielectrics in organic thin-film transistors. Phys. Rev. B Condens. Matter Mater. Phys. 73, 1–7 (2006)
28.
Lu, Y., Lee, W.H., Lee, H.S., Jang, Y., Cho, K.: Low-voltage organic transistors with titanium oxide/polystyrene bilayer dielectrics. Appl. Phys. Lett. 94, 108–111 (2009)
29.
Hsu, H.L., Yang, W.C., Lee, Y.-L., Yew, T.R.: Polyacrylonitrile as a gate dielectric material. Appl. Phys. Lett. 91, 23501 (2007)CrossRef
30.
Orgiu, E., Locci, S., Fraboni, B., Scavetta, E., Lugli, P., Bonfiglio, A.: Analysis of the hysteresis in organic thin-film transistors with polymeric gate dielectric. Org. Electron. Phys. Mater. Appl. 12, 477–485 (2011)
31.
Sharma, P., Gupta, N.: Investigation on material selection for gate dielectric in nanocrystalline silicon (nc-Si) top-gated thin film transistor (TFT) using Ashby’s, VIKOR and TOPSIS. J. Mater. Sci. Mater. Electron. 26, 9607–9613 (2015)CrossRef
32.
Kandpal, K., Gupta, N.: Investigations on high-k dielectrics for low threshold voltage and low leakage zinc oxide thin-film transistor, using material selection methodologies. J. Mater. Sci. Mater. Electron. 27, 5972–5981 (2016)CrossRef
33.
Kumar, A., Sah, B., Singh, A.R., Deng, Y., He, X., Kumar, P.: A review of multi criteria decision making (MCDM) towards sustainable renewable energy development. Renew. Sustain. Energy Rev. 69, 596–609 (2017)CrossRef
34.
Behzadian, M., Otaghsara, S.K., Yazdani, M., Ignatius, J.: Expert systems with applications a state-of the-art survey of TOPSIS applications. Expert Syst. Appl. 39, 13051–13069 (2012)CrossRef
35.
Horowitz, B.G., Hajlaoui, R., Bouchriha, H.: The concept of ‘threshold voltage’ in organic field-effect transistors. Adv. Mater. 10, 923–927 (1998)CrossRef
36.
Martínez Hardigree, J.F., Katz, H.E.: Through thick and thin: tuning the threshold voltage in organic field-effect transistors. Acc. Chem. Res. 47, 1369–1377 (2014)CrossRef
37.
Chou, W.Y., et al.: Effect of surface free energy in gate dielectric in pentacene thin-film transistors. Appl. Phys. Lett. 89, 112126 (2006)CrossRef
38.
Matsumoto, T., Ou-Yang, W., Miyake, K., Uemura, T., Takeya, J.: Study of contact resistance of high-mobility organic transistors through comparisons. Org. Electron. Phys. Mater. Appl. 14, 2590–2595 (2013)
39.
Ng, T.N., Daniel, J.H., Sambandan, S., Arias, A.C., Chabinyc, M.L., Street, R.A.: Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors. J. Appl. Phys. 103, 44506 (2008)CrossRef
40.
Huang, T.H., Pei, Z., Lin, W.K., Chang, S.T., Liu, K.C.: Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction. Thin Solid Films 518, 7381–7384 (2010)CrossRef
41.
Noh, Y.H., Park, S.Y., Seo, S.M., Lee, H.H.: Root cause of hysteresis in organic thin film transistor with polymer dielectric. Org. Electron. Phys. Mater. Appl. 7, 271–275 (2006)
42.
Guo, D., Ikeda, S., Saiki, K., Miyazoe, H., Terashima, K.: Effect of annealing on the mobility and morphology of thermally activated pentacene thin film transistors. J. Appl. Phys. 99, 1–7 (2006)
43.
Fukuda, K., Sekitani, T., Someya, T.: Effects of annealing on electronic and structural characteristics of pentacene thin-film transistors on polyimide gate dielectrics. Appl. Phys. Lett. 95, 189–192 (2009)
44.
Ahn, T., Choi, Y., Jung, H.M., Yi, M.: Fully aromatic polyimide gate insulators with low temperature processability for pentacene organic thin-film transistors. Org. Electron. 10, 12–17 (2009)CrossRef
45.
Faraji, S., et al.: Improved performance of pentacene field-effect transistors using a polyimide gate dielectric layer. J. Phys. D 38, 1148–1151 (2005)CrossRef
46.
Tetzner, K., Bose, I.R., Bock, K.: Organic field-effect transistors based on a liquid-crystalline polymeric semiconductor using SU-8 gate dielectrics on flexible substrates. Materials (Basel) 7, 7226–7242 (2014)CrossRef
47.
Zhang, J., Zhou, W.X., Chan-Park, M.B., Conner, S.R.: Argon plasma modification of SU-8 for very high aspect ratio and dense copper electroforming. J. Electrochem. Soc. 152, 716–721 (2005)CrossRef
48.
Prime, D., Paul, S.: Electrical and morphological properties of polystyrene thin films for organic electronic applications. Vacuum 84, 1240–1243 (2010)CrossRef
49.
Jung, C., Maliakal, A., Sidorenko, A., Siegrist, T.: Pentacene-based thin film transistors with titanium oxide-polystyrene/polystyrene insulator blends: High mobility on high K dielectric films. Appl. Phys. Lett. 90, 062111–062114 (2007)CrossRef
50.
Chua, L., et al.: General observation of n-type field-effect behaviour in organic semiconductors. Nature 434, 194–199 (2005)CrossRef
51.
Park, J.H., Hwang, D.K., Lee, J., Im, S., Kim, E.: Studies on poly(methyl methacrylate) dielectric layer for field effect transistor: influence of polymer tacticity. Thin Solid Films 515, 4041–4044 (2007)CrossRef
52.
Wünsche, J., et al.: The correlation between gate dielectric, film growth, and charge transport in organic thin film transistors: the case of vacuum-sublimed tetracene thin films. J. Mater. Chem. C 1, 967–976 (2013)CrossRef
53.
Na, M., Rhee, S.W.: Electronic characterization of Al/PMMA[poly(methyl methacrylate)/p-Si and Al/CEP(cyanoethyl pullulan)/p-Si structures. Org. Electron. Phys. Mater. Appl. 7, 205–212 (2006)
54.
Shin, E.Y., Choi, E.Y., Noh, Y.Y.: Parylene based bilayer flexible gate dielectric layer for top-gated organic field-effect transistors. Org. Electron. Phys. Mater. Appl. 46, 14–21 (2017)
55.
Shih, V.C.Y., Harder, T.A., Tai, Y.-C.: Yield strength of thin-film parylene-C. In: Design, Test, Integration and Packaging of MEMS/MOEMS, pp. 5–7 (2003)
56.
Iazykov, M., Erouel, M., Tardy, J., Skryshevsky, V.A., Phaner-Goutorbe, M.: Atomic force microscopy analysis of morphology of thin pentacene films deposited on parylene-C and benzocyclobutene. Surf. Sci. 607, 170–173 (2013)CrossRef
57.
Ha, T.J.: Low-voltage and hysteresis-free organic thin-film transistors employing solution-processed hybrid bilayer gate dielectrics. Appl. Phys. Lett. 105, 114 (2014)CrossRef
58.
Jia, X., Fuentes-Hernandez, C., Wang, C.Y., Park, Y., Kippelen, B.: Stable organic thin-film transistors. Sci. Adv. 4, eaao1705 (2018)CrossRef
Metadaten
Titel
Low-k polymer gate dielectric selection for organic thin-film transistors (OTFTs) using material selection methodologies
verfasst von
Karri Babu Ravi Teja
Navneet Gupta
Publikationsdatum
11.05.2019
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 3/2019
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-019-01343-1

Weitere Artikel der Ausgabe 3/2019

Journal of Computational Electronics 3/2019 Zur Ausgabe

OriginalPaper

An ultra-sensitive gas nanosensor based on asymmetric dual-gate graphene nanoribbon field-effect transistor: proposal and investigation

OriginalPaper

First-principles calculations of the structural, electronic, and optical properties of a ZnS/GaP van der Waals heterostructure

OriginalPaper

Smoothing globally continuous piecewise functions based on limiting functions for device compact modeling

OriginalPaper

First-principles study of molecule adsorption on Ni-decorated monolayer MoS2

ReviewPaper

A brief review of frequency, radiation pattern, polarization, and compound reconfigurable antennas for 5G applications

OriginalPaper

A 3-D potential model to assess DC characteristics of Si FinFETs

Neuer Inhalt

    Bildnachweise