Low temperature preparation and electric properties of highly (100)-oriented Pb_0.8 La_0.1Ca_0.1Ti_0.975O₃ thin films prepared by a sol–gel route

Highly (100)-oriented Pb_0.8La_0.1Ca_0.1Ti_0.975O₃ (PLCT) thin films deposited on Pt/Ti/SiO₂/Si substrate were successfully achieved by a sol–gel route. The influence of annealing temperature on microstructures and electric properties was investigated; it was found that the PLCT film could be crystallized only at 450 °C. When the annealing temperature increased to 500 °C, the PLCT film exhibited highly (100)-oriented, which also possessed higher remnant polarization Pr (27 μC/cm²) and better pyroelectric figure of merit (F _d = 205 μC/m²k) at room temperature. It was also found too high annealing temperature (625 °C) could lead to recrystallization of film, and the small grains caused by recrystallization could make polarization reversal difficult and disturbed the preferred crystal growth in film, which was not benefit to obtain enhanced electric properties.