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Microsystem Technologies
Erschienen in: Microsystem Technologies 10/2020

09.02.2018 | Technical Paper

Material selection methodology for radio frequency (RF) microelectromechanical (MEMS) capacitive shunt switch

verfasst von: Navneet Gupta, R. Ashwin

Erschienen in: Microsystem Technologies | Ausgabe 10/2020

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Abstract

This paper describes the process of selecting the most optimum Radio Frequency Micro- electro- mechanical-systems (RF-MEMS) switch design using Ashby’s methodology. The switches are compared on the basis of parameters like actuation voltage, insertion loss, isolation and switching time using material selection charts. The chart shows that a low-voltage metal-to-metal contact shunt capacitive RF-MEMS having a bridge structure with Si-GaAs substrate, electroplated gold contacts and silicon nitride dielectric layer, is the most optimum of all the switches considered.
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Metadaten
Titel
Material selection methodology for radio frequency (RF) microelectromechanical (MEMS) capacitive shunt switch
verfasst von
Navneet Gupta
R. Ashwin
Publikationsdatum
09.02.2018
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 10/2020
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-018-3761-1

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