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Erschienen in:
Memristor Device Overview Kapitel lesen Erstes Kapitel lesen

2018 | OriginalPaper | Buchkapitel

6. Memristor Device Modeling

verfasst von : Heba Abunahla, Baker Mohammad

Erschienen in: Memristor Technology: Synthesis and Modeling for Sensing and Security Applications

Verlag: Springer International Publishing

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Abstract

This chapter presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behaviors. A detailed MATLAB-based algorithm is developed to clarify and simplify the simulation environment. Moreover, the provided model is used to simulate and predict the effect of oxide thickness, material type, and operating temperatures on the electrical characteristics of the device. The value of this contribution is to provide a framework intended to simulate anionic memristor devices using correlated mathematical models. In addition, the model can be used to explore device materials and predict its performance.

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Vorheriges Kapitel Memristor Device for Security and Radiation Applications
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Metadaten
Titel
Memristor Device Modeling
verfasst von
Heba Abunahla
Baker Mohammad
Copyright-Jahr
2018
Buch
Memristor Technology: Synthesis and Modeling for Sensing and Security Applications

Print ISBN: 978-3-319-65698-4

Electronic ISBN: 978-3-319-65699-1

Copyright-Jahr: 2018

DOI
https://doi.org/10.1007/978-3-319-65699-1_6

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