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Journal of Computational Electronics

Erschienen in:

04.06.2023

Mg₂Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability

verfasst von: Sukanta Kumar Swain, Sangita Kumari Swain, Shashi Kant Sharma

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2023

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Abstract

We present the results of a simulation study of Mg₂Si heterojunction-based SOI TFETs using TCAD. Mg₂Si is used as low-bandgap material for the source to achieve high on-current. The proposed structure enhances the tunneling rate that improves current conduction and subthreshold swing considerably. The on-current (I_ON), off-current (I_OFF), and subthreshold swing were found to be 1.089 × 10⁻⁵A/μm, 8.632 × 10⁻¹⁷A/μm, 1.26 × 10¹¹, and 27 mV/decade, respectively. Further, a systematic study for the physical interpretation of electron Fermi potential, DC, and analog/RF performance has also been carried out. The proposed device follows the ITRS roadmap for low power switching performance.

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Titel: Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability
verfasst von: Sukanta Kumar Swain
Sangita Kumari Swain
Shashi Kant Sharma
Publikationsdatum: 04.06.2023
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 4/2023
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02051-7

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