Anzeige
Erschienen in:
01.09.2012
Microstructure and ferroelectric properties of compositionally graded Nd-doped Bi4Ti3O12 thin films prepared by sol–gel method
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2012
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
The compositionally graded Bi4−xNdxTi3O12 (BNT) thin films were prepared on Pt/Ti/SiO2/Si substrates by sol–gel method. Their microstructure, ferroelectric and dielectric properties were investigated. The single-phase upgraded and downgraded BNT films were obtained with (117) preferred orientation. Compared to the homogeneous BNT films prepared by the same conditions, the remanent polarization (P
r) and permittivity (ε
r) of compositionally graded BNT films were significantly enhanced. The upgraded BNT film showed larger 2P
r (34.9 μC/cm2) and ε
r (509), and those of downgraded BNT film were 29.4 μC/cm2 and 505. Bi element in the downgraded BNT film accumulated near the interface of film/Pt bottom electrode, which deteriorated the compositional gradient and resulted in decreasing 2P
r and ε
r compared to the upgraded BNT film.