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Erschienen in: Journal of Materials Science: Materials in Electronics 9/2014

01.09.2014

Microstructures and electrical properties of Sr0.6Bi0.4Fe0.6Sn0.4O3–BaCoII 0.02CoIII 0.04Bi0.94O3 thick-film thermistors with low room-temperature resistivity

verfasst von: Changlai Yuan, Tao Yang, Ying Luo, Changrong Zhou, Guohua Chen, Yun Yang

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2014

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Abstract

The thick film NTC thermistor of compositions Sr0.6Bi0.4Fe0.6Sn0.4O3 + BaCoII 0.02CoIII 0.04Bi0.94O3, synthesized by solid state reaction, were prepared by screen-printing on alumina substrate. The microstructures, composition dependent, impedance characteristics, self-heating behaviours and thermistor properties were investigated. The relation between logarithm of resistivity and reciprocal of absolute temperature for the thick film thermistor was almost linear for all the compositions studied. The room-temperature resistivity, thermistor constant and activation energy of the films decreased with increasing BaCoII 0.02CoIII 0.04Bi0.94O3 content and were in the range of 18.2–945.7 Ω cm, 1,753–2,649 K and 0.151–0.228 eV, respectively. The thick films showed the nearest-neighbor hopping or variable-range hopping model depended on the compositions. Impedance analysis indicated that the resistivity value of the thick films was mainly ascribed to the contribution of grains. At higher BaCoII 0.02CoIII 0.04Bi0.94O3 content, a good self-heating effect of one thermistor film was observed.

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Metadaten
Titel
Microstructures and electrical properties of Sr0.6Bi0.4Fe0.6Sn0.4O3–BaCoII 0.02CoIII 0.04Bi0.94O3 thick-film thermistors with low room-temperature resistivity
verfasst von
Changlai Yuan
Tao Yang
Ying Luo
Changrong Zhou
Guohua Chen
Yun Yang
Publikationsdatum
01.09.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2014
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2115-8

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