Microsystem Technologies

Preface

• Editorial

Jyotsna Kumar Mandal, Angsuman Sarkar

Foreword: special issue on more than more microsystems

• Editorial

Bharat Bhushan

Characterization and analysis of low-noise GaN-HEMT based inverter circuits

• Technical Paper

Sritoma Paul, Shubham Mondal, Angsuman Sarkar

Effect of high-K dielectric on differential conductance and transconductance of ID-DG MOSFET following Ortiz-Conde model

• Technical Paper

Arpan Deyasi, Angsuman Sarkar, Krishnendu Roy, Anal Roy Chowdhury

Performance analysis of gas sensing device and corresponding IoT framework in mines

• Technical Paper

Subhrapratim Nath, Anup Dey, Prithviraj Pachal, Jamuna Kanta Sing, Subir Kumar Sarkar

Junctionless double gate non-parabolic variable barrier height Si-MOSFET for energy efficient application

• Technical Paper

Gargi Jana, Dipanjan Sen, Manash Chanda

Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications

• Technical Paper

A. Basak, M. Chanda, A. Sarkar

Effect of band non-parabolicity on energy sub-band profile for nano-dimensional MOSFET

• Technical Paper

Mainak Mukherjee, Manash Chanda, Angshuman Sarkar, Anup Dey

Multicore implementation and performance analysis of a chaos based LSB steganography technique

• Technical Paper

Gaurav Gambhir, Jyotsna Kumar Mandal

Silicon photovoltaic cell based on graphene oxide as an active layer

• Technical Paper

Pramila Mahala, Navneet Gupta, Sumitra Singh

Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor

• Technical Paper

M. R. Jena, A. K. Panda, G. N. Dash

Effect of fringing field capacitances in RF and small signal parameters of surrounding gate MOSFET

• Technical Paper

Ruben Ray, Rahul Das, Manash Chanda

Saliency detection via outlier pursuit in compress domain (SDOPCD)

• Technical Paper

Sujit Das, Jyotsna Kumar Mandal

A 10 nm MOS and its applications

• Technical Paper

Jyotsna Kumar Mandal, Raktim Chakraborty

Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications

• Technical Paper

Nisha Chugh, Manoj Kumar, Monika Bhattacharya, R. S. Gupta

Investigation of electrical/analog performance and reliability of gate metal and source pocket engineered DG-TFET

• Technical Paper

Jaya Madan, Rahul Pandey, Rajnish Sharma, Rishu Chaujar

Favorable influence of ssDNA-functionalized SWCNT on the navigation pattern of C. elegans

• Technical Paper

Swati Sinha, Siddharth Shaw, Kunal Biswas, Debashis De, Samir Chandra Das, Angsuman Sarkar, Jaya Bandyopadhyay

Noise analysis of double gate composite InAs based HEMTs for high frequency applications

• Technical Paper

R. Poornachandran, N. Mohan Kumar, R. Saravana Kumar, S. Baskaran

Design and performance study on a new biaxial micro-accelerometer with variable cross-section beam

• Technical Paper

Jianghong Sun, Jialin Wang, Keke Gao, Xueping He, Feng Gao, Yufan He, Naizheng Li, Junjian Wang

Development of three-dimensional wafer level chip scale packaging using via last TSV and UV laser releasable temporary bonding technologies

Chengqian Wang, Meng Zhang, Xuefei Ming, Shuying Ma, Daquan Yu