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Über dieses Buch

This book describes the physical basis of microwave electronics and related topics, such as microwave vacuum and microwave semiconductor devices.

It comprehensively discusses the main types of microwave vacuum and microwave semiconductor devices, their principles of action, theory, parameters and characteristics, as well as ways of increasing the frequency limit of various devices up to the terahertz frequency band. Further, it applies a unified approach to describe charged particle interaction within electromagnetic fields and the motion laws of charged particles in various media.

The book is intended as a manual for researchers and engineers, as well as advanced undergraduate and graduate students.

Inhaltsverzeichnis

Frontmatter

Microwave Electronics Physical Foundations

Frontmatter

Chapter 1. Main Stages of Microwave Electronics Development

Abstract
Short hystory of microwave electron devices invention and evolution is presented. Main stages of vaccum and solid state electronics are considered and perspectives their further development are discussed.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 2. Interaction of Charged Particles with an Alternating Electromagnetic Field

Abstract
Radiation of electromagnetic field by an individual charged particle (CP) and their ensembles are considered, including sponaneous and induced radiation. Also macroscopic electromagnetics equations and CP motion equations in vacuum, plasma and solids are examined. Various noise sources and their properties are also considered.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 3. Oscillations and Waves in Charged Particle Beams

Abstract
Oscillations and waves in charged particles beams, propagating in vacuum and solids are considered. Formulas for oscillation frequency, decay constant are derived taking into account boundary conditions.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 4. Interaction of Charged Particle Fluxes with a High-Frequency Electromagnetic Field

Abstract
The chapter describes interaction processes between electromagnetic field and CP fluxes. Iteraction with quasi-static field and wave field is considered, power balance is derived. CP motion under the influence of alternating electromagnetic field is examined.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 5. A Microwave Device as a Circuit Element

Abstract
  The chapter consideres a microwave elrctron device (MED) as an element of electronic facility or system. Main device requirements are formulated, classification of MEDs is given and their basic functional subassemblies are described. basic parameters and characteristics of MEDs are described and examples of them are given.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Microwave Vacuum Electron Devices

Frontmatter

Chapter 6. Devices with Quasi-static Control

Abstract
Vacuum devices with quasi-static control (gridded tubes) were the first devices capable to work in UHF band. Working principles of these devices are described, their parameters and characteristics are examined, frequency limitations are discussed, main fields of applications are listed.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 7. O-Type Microwave Devices

Abstract
O-type microwave vacuum electron devices are considered. This type of devices use dynamic control on electron beam. Basic concepts of operation, linear theory of bunching, elements of nonlinear theory are presented. Main representatives of the O-type devices are described, their construction, characteristics and parameters are introduced. The problem of increasing maximum working frequency of these devices is discussed and possible ways of this problem decision are listed. The constant magnetic field in these devices is used only for transporting the beam and does not participate in the interaction process. Klystrons, traveling wave tubes, backward wave oscillators and hybrid devices are among the representatives of this type of device.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 8. M-Type Microwave Electron Devices

Abstract
The chapter describes phycal phenomena in the M-type microwave electron devices. Electrons is these devices move in crossed electrical and magnetic constant fields, which affect its ineraction with microwave electric field. Liniar theory of M-type devises and elements of non-linear theory are described, main types of the devices, their parametrs and characteristics are considered and their design are shown.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 9. Gyro-resonant Devices

Abstract
Operation principle of gyro-resonant electron devices (cyclotron resonance masers), elements of their theory, their main types, parameters and characteristics are considered. The main attention is turnen to millimeter and submillimeter devices.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 10. Relativistic Microwave Devices

Abstract
Relativistic microwave devices are a large group of generators and amplifiers of microwave radiation in which the relativistic effects are noticeably manifested: the dependence of the electron mass on energy as well as the normal and anomalous Doppler effects. Pecualarities of elecron-field interaction in relativistic devices are considered, main types of microwave revatuvistic devices are described, their construction, parameters and characteristics are listed. An attention is given to installations capable to generate teragerz and X-rays of high power.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Semiconductor Microwave Devices

Frontmatter

Chapter 11. Key Functional Elements of Semiconductor Microwave Devices

Abstract
The fundamentals of the band theory  are considered, properties of main semiconductor materials are presented. The I-V and C-V characteristic of a p-n junction and the Schottky barier are analized. A method for obtaining an ohmic contact with a semiconducter is described.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 12. Diodes with Positive Dynamic Resistance

Abstract
Semiconductor diodes with positive differential resistance (PDR) are the most widely distributed electron device. The chapter considers main types of these diodes, namely detector and mixer diodes, varactor diodes and tunnel diodes. Their structure, theoretical aspects of functionality, parameters and characteristics are considered. The basic schemes where diodes with PDR are used and their parameters are also presented.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 13. Diodes with Negative Dynamic Resistance

Abstract
Semiconductor diodes with negative differential resistance (NDR) are used as genarators and amplifiers in microwave band. The chapter considers main types of this devices: IMPATT diodes, BarITT diodes, Gunn and tunnel diodes. Desctiption of theirs structures, theoretical aspects of functionality, characteristics and basic schemes with NDR devices are presented.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Chapter 14. Microwave Transistors

Abstract
Features of disigning field and bipolar transistors in the microwave range are considered. The main attention is paid to a field effect transistor with a Schottky barrier control on gallium arsenide. Equivalent schemes, physical-topological models and temperature models are presented. Features of functioning, parameters and characteristics are discussed. The noise model is analized.
Andrey D. Grigoriev, Vyacheslav A. Ivanov, Sergey I. Molokovsky (deceased)

Backmatter

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