A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading resistance components is applied to both Si (100) and Si (110) MOSFETs. The spreading resistance components under extension-to-gate overlap and spacer regions are successfully correlated to the lateral extension (EXT) doping abruptness by the relationship between on-resistance (R
) and overlap capacitance response (C
). The lateral doping profile difference is extracted between (100) and (110) PMOS, which successfully explains higher external resistance in measured (110) PMOS.