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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 3/2017

16.05.2017

Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET

verfasst von: Abdelali Diabi, Abdesselam Hocini, Souheil Mouetsi, Djamel Khedrouche

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2017

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Abstract

The performance of a Schottky barrier carbon nanotube field effect transistor (SB-CNTFET) has been analyzed by means of a compact model. We present a study of the physical and geometrical parameters and their effects on the static and dynamic performance of the SB-CNTFET. For the static regime, we determine the variations in the current–voltage characteristics for three values of the potential barrier and the influence of the barrier on the on-state current. Also, we report the effect of the oxide thickness on the static performance. The relationship between the current–voltage characteristics and the nanotube diameter for different values of drain–source voltage is investigated. For dynamic systems, we study the effect of the gate–source voltage, the chirality and the CNT diameter on the transition frequency. It has been observed that the performance of the SB-CNTFET can be significantly controlled by changing some physical and geometrical parameters of the device.
Vorheriger Artikel Modeling and simulation of carbon nanotube-based dual-gated enzyme field effect transistor for acetylcholine detection
Nächster Artikel Inversion of rectification characteristics modulated by ribbon widths in armchair graphene/h-BN nano-ribbon hetero-junctions with different interface types

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Metadaten
Titel
Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET
verfasst von
Abdelali Diabi
Abdesselam Hocini
Souheil Mouetsi
Djamel Khedrouche
Publikationsdatum
16.05.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 3/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-0996-5

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