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Erschienen in:
2001 | OriginalPaper | Buchkapitel
Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High Voltage Power Devices
verfasst von : Winfried Kaindl, Gerhard Wachutka, Gerald Sölkner
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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In this paper, we present a model that describes the initial generation of charge due to the loss of kinetic energy of an ion penetrating into a semiconductor device. 2D simulations of a reverse biased power diode visualize the evolution of carrier densities and electric fields in the interior of the device as initiated by the ion. For the case of irradiation with 17MeV '2C ions, the simulations agree well with recent experimental findings.