nach oben

Erschienen in:

2010 | OriginalPaper | Buchkapitel

39. Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth

verfasst von : Vishwanath (Vish) Prasad, Srinivas Pendurti

Erschienen in: Springer Handbook of Crystal Growth

Verlag: Springer Berlin Heidelberg

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config

KI-gestützte Suche

Aus

Abstract

A major issue in the growth of semiconductor crystals is the presence of line defects or dislocations. Dislocations are a major impediment to the usage of III–V and other compound semiconductor crystals in electronic, optical, and other applications. This chapter reviews the origins of dislocations in melt-based growth processes and models for stress-driven dislocation multiplication. These models are presented from the point of view of dislocations as the agents of plastic deformation required to relieve the thermal stresses generated in the crystal during melt-based growth processes. Consequently they take the form of viscoplastic constitutive equations for the deformation of the crystal taking into account the microdynamical details of dislocations such as dislocation velocities and interactions. The various aspects of these models are dealt in detail, and finally some representative numerical results are presented for the liquid encapsulated Czochralski (LEC) growth of InP crystals.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Vorheriges Kapitel Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon Crystals

Nächstes Kapitel Mass and Heat Transport in BS and EFG Systems

39.1.

J. Czochralski: Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle, Z. Phys. Chem. 92, 219–221 (1917), in German

39.2.

G.K. Teal, J.B. Little: Growth of germanium single crystals, Phys. Rev. 78, 647 (1950)

39.3.

W.C. Dash: Dislocation free silicon crystals. In: Growth and Perfection of Crystals, ed. by R.M. Doremus, B.W. Roberts, D. Turnbull (Wiley, New York 1958)

39.4.

V. Swaminathan, A.S. Jordan: Dislocations in III/V compounds, Semicond. Semimet. 38, 293–341 (1993)CrossRef

39.5.

R.J. Roedel, A.R. Von Neida, R. Caruso, L.R. Dawson: The effect of dislocations in Ga_1-xAl_xAs:Si light-emitting diodes, J. Electrochem. Soc. 126, 637–641 (1979)CrossRef

39.6.

J.P. Hirth, J. Lothe: Theory of Dislocations (Krieger, Malabar 1992)

39.7.

H. Alexander: On dislocation generation in semiconductor crystals, Radiat. Eff. Defects Solids 112(1/2), 1–12 (1989)CrossRef

39.8.

B.T. Lee, R. Gronsky, E.D. Bourret: Dislocation loops and precipitates associated with excess arsenic in GaAs, J. Appl. Phys. 64(1), 114–118 (1988)ADSCrossRef

39.9.

J. Lagowski, H.C. Gatos, T. Aoyama, D.G. Lin: Fermi energy control of vacancy coalescence and dislocation density in melt-grown GaAs, Appl. Phys. Lett. 45(6), 680–682 (1984)ADSCrossRef

39.10.

W. Zulehner: Czochralski growth of silicon, J. Cryst. Growth 65(1–3), 189–213 (1983)ADSCrossRef

39.11.

M.F. Ashby, L. Johnson: On the generation of dislocations at misfitting particles in a ductile matrix, Philos. Mag. 20, 1009–1022 (1969)ADSCrossRef

39.12.

A.S. Jordan, R. Caruso, A.R. Von Neida: A thermoelastic analysis of dislocation generation in pulled GaAs crystals, Bell Syst. Technol. J. 59(4), 593–637 (1980)CrossRef

39.13.

N. Kobayashi, T. Iwaki: A thermoelastic analysis of the thermal stress produced in a semi-infinite cylindrical single crystal during the Czochralski growth, J. Cryst. Growth 73, 96–110 (1985)ADSCrossRef

39.14.

M. Duseaux: Temperature profile and thermal-stress calculations in GaAs crystals growing from the melt, J. Cryst. Growth 61(3), 576–590 (1983)ADSCrossRef

39.15.

J.C. Lambropoulos: Stresses near the solid-liquid interface during the growth of a Czochralski crystal, J. Cryst. Growth 80, 245–256 (1987)ADSCrossRef

39.16.

C.E. Schvezov, I.V. Samarasekera, F. Weinberg: Calculation of the shear stress distribution in LEC gallium arsenide for different growth conditions, J. Cryst. Growth 92, 479–488 (1988)ADSCrossRef

39.17.

G.O. Meduoye, K.E. Evans, D.J. Bacon: Modelling of the growth of the LEC technique II. Thermal stress distribution and influence of interface shape, J. Cryst. Growth 97, 709–719 (1989)ADSCrossRef

39.18.

G.O. Meduoye, D.J. Bacon, K.E. Evans: Computer modelling of temperature and stress distributions in LEC-grown GaAs crystals, J. Cryst. Growth 108, 627–636 (1991)ADSCrossRef

39.19.

S. Motakef, K.W. Kelly, K. Koai: Comparison of calculated and measured dislocation density in LEC-grown GaAs crystals, J. Cryst. Growth 113, 279–288 (1991)ADSCrossRef

39.20.

F. Dupret, P. Necodeme, Y. Ryckmans: Numerical method for reducing stress level in GaAs crystals, J. Cryst. Growth 97, 162–172 (1989)ADSCrossRef

39.21.

D.E. Bornside, T.A. Kinney, R.A. Brown: Minimization of thermoelastic stresses in Czochralski grown silicon: Application of the integrated system model, J. Cryst. Growth 108, 779–805 (1991)ADSCrossRef

39.22.

Y.F. Zou, H. Zhang, V. Prasad: Dynamics of melt-crystal interface and coupled convection-stress predictions for Czochralski crystal growth processes, J. Cryst. Growth 166, 476–482 (1996)ADSCrossRef

39.23.

I. Yonenaga, K. Sumino: Impurity effects on the generation, velocity, and immobilization of dislocations in GaAs, J. Appl. Phys. 65, 85–92 (1989)ADSCrossRef

39.24.

J. Lubliner: Plasticity Theory (Macmillan, New York 1990)MATH

39.25.

K. Sumino: Mechanical behavior of semiconductors. In: Handbook on Semiconductors, Vol. 3a, ed. by S. Mahajan, T.S. Moss (Elsevier, Amsterdam 1994) pp. 73–181

39.26.

J. Hornstra: Dislocations in the diamond lattice, J. Phys. Chem. Solids 5, 129–141 (1958)ADSCrossRef

39.27.

H. Alexander: Dislocations in covalent crystals. In: Dislocations in Solids, Vol. 7, ed. by F.R.N. Nabarro (North-Holland, Amsterdam 1986) pp. 113–234

39.28.

D.J.H. Cockayne, A. Hons: Dislocations in semiconductors as studied by weak-beam electron-microscopy, J. Phys. 40(6), 11–18 (1979)

39.29.

H. Gottschalk, G. Patzer, H. Alexander: Stacking-fault energy and ionicity of cubic III–V compounds, Phys. Status Solidi (a) 45(1), 207–217 (1978)ADSCrossRef

39.30.

R. Meingast, H. Alexander: Dissociated dislocations in germanium, Phys. Status Solidi (a) 17(1), 229–236 (1973)ADSCrossRef

39.31.

A. George, J. Rabier: Dislocations and plasticity in semiconductors. I – Dislocation structures and dynamics, Rev. Phys. Appl. 22, 941–966 (1987)CrossRef

39.32.

W.G. Johnston, J.J. Gilman: Dislocation velocities, dislocation densities, and plastic flow in lithium fluoride crystals, J. Appl. Phys. 30, 129–144 (1959)ADSCrossRef

39.33.

H. Alexander, P. Haasen: Dislocations and plastic flow in the diamond structure. In: Solid State Physics, Vol. 22, ed. by F. Seitz, D. Turnbull, H. Ehrenreich (Academic, New York 1968) pp. 28–158

39.34.

A.R. Chaudhuri, J.R. Patel, L.G. Rubin: Velocities and densities of dislocations in germanium and other semiconductor crystals, J. Appl. Phys. 33, 2736–2746 (1962)ADSCrossRef

39.35.

G.I. Taylor: The mechanism of plastic deformation of crystals. Part I – Theoretical, Proc. R. Soc. Lond. Ser. A 145, 362–387 (1934)ADSMATHCrossRef

39.36.

F.R.N. Babarro, Z.S. Basinski, D.B. Holt: The plasticity of pure single crystals, Adv. Phys. 13, 193–323 (1964)ADSCrossRef

39.37.

E. Peissker, P. Haasen, H. Alexander: Anisotropic plastic deformation of indium antimonide, Philos. Mag. 7, 1279 (1962)ADSCrossRef

39.38.

I. Yonenaga, K. Sumino: Effects of in impurity on the dynamic behavior of dislocations in GaAs, J. Appl. Phys. 62(4), 1212–1219 (1987)ADSCrossRef

39.39.

I. Yonenaga, K. Sumino: Mechanical properties and dislocation dynamics of GaP, J. Mater. Res. 4(2), 355–360 (1989)ADSCrossRef

39.40.

J. Völkl: Stress in the cooling crystal. In: Handbook of Crystal Growth, Vol. 2, ed. by D.T.J. Hurle (North Holland, Amsterdam 1994) pp. 823–874

39.41.

H. Siethoff, W. Schröter: Work-hardening and dynamical recovery in silicon and germanium at high-temperatures and comparison with FCC metals, Scr. Metall. 17(3), 393–398 (1983)CrossRef

39.42.

H. Siethoff, R. Behrensmeier: Plasticity of undoped GaAs deformed under liquid encapsulation, J. Appl. Phys. 67(8), 3673–3680 (1990)ADSCrossRef

39.43.

H. Siethoff, K. Ahlborn, H.G. Brion, J. Völkl: Dynamical recovery and self-diffusion in InP, Philos. Mag. A 57(2), 235–244 (1988)ADSCrossRef

39.44.

H. Siethoff, W. Schröeter: New phenomena in the plasticity of semiconductors and FCC metals at high temperatures, Z. Metall. 75(7), 475–491 (1984)

39.45.

A.K. Mukherjee, J.E. Bird, J.E. Dorn: Experimental correlations for high temperature creep, ASM Transactions 62, 155–179 (1969)

39.46.

C.R. Barrett, W.D. Nix: A Model for steady state creep based on the motion of jogged screw dislocations, Acta Metall. 13, 1247–1258 (1965)CrossRef

39.47.

H.G. Brion, H. Siethoff, W. Schröter: New stages in stress–strain curves of germanium at high-temperatures, Philos. Mag. A 43(6), 1505–1513 (1981)ADSCrossRef

39.48.

H. Siethoff: Cross-slip in the high-temperature deformation of germanium, silicon and indium-antimonide, Philos. Mag. A 47(5), 657–669 (1983)ADSCrossRef

39.49.

B. Escaig: Cross-slip processes in the fcc structure. In: Dislocation Dynamics, ed. by A.R. Rosenfield, R. Alan (McGraw-Hill, London 1968) pp. 655–677

39.50.

D. Maroudas, R.A. Brown: On the prediction of dislocation formation in semiconductor crystals grown from the melt – Analysis of the Haasen model for plastic deformation dynamics, J. Cryst. Growth 108, 399–415 (1991)ADSCrossRef

39.51.

C.T. Tsai: On the finite-element modeling of dislocation dynamics during semiconductor-crystal growth, J. Cryst. Growth 113, 499–507 (1991)ADSCrossRef

39.52.

C.T. Tsai, A.N. Gulluoglu, C.S. Hertley: A crystallographic methodology for modeling dislocation dynamics in GaAs crystals grown from the melt, J. Appl. Phys. 73, 1650–1656 (1993)ADSCrossRef

39.53.

J.C. Lambropoulos, C.H. Wu: Mechanics of shaped crystal growth from the melt, J. Mater. Res. 11, 2163–2176 (1996)ADSCrossRef

39.54.

N. Miyazaki, Y. Kuroda: Dislocation density simulations for bulk single crystal growth process, Met. Mater. Int. 4(4), 883–890 (1998)CrossRef

39.55.

J.C. Moosbrugger: Continuum slip viscoplasticity with the Haasen constitutive model – application to single-crystal inelasticity, Int. J. Plast. 11, 799–826 (1995)MATHCrossRef

39.56.

J.C. Moosbrugger, A. Levy: Constitutive modelling for CdTe single-crystals, Metall. Mater. Trans. A 26(10), 2687–2697 (1995)CrossRef

39.57.

H. Chung, W. Si, M. Dudley, A. Anselmo, D.F. Bliss, A. Maniatty, H. Zhang, V. Prasad: Characterization of structural defects in MLEK grown InP single crystals using synchotron beam x-ray topography, J. Cryst. Growth 174(1–4), 230–237 (1997)ADSCrossRef

39.58.

H. Chung, W. Si, M. Dudley, D.F. Bliss, R. Kalan, A. Maniatty, H. Zhang, V. Prasad: Characterization of defect structures in magnetic liquid encapsulated Kyropoulos grown InP single crystals, J. Cryst. Growth 181(1-2), 17–25 (1997)ADSCrossRef

39.59.

H. Steinhardt, P. Haasen: Creep and dislocation velocities in GaAs, Phys. Status Solidi (a) 49, 93–101 (1978)ADSCrossRef

39.60.

I. Yonenaga, U. Unose, K. Sumino: Mechanical properties of GaAs crystals, J. Mater. Res. 2, 252–261 (1987)ADSCrossRef

39.61.

A. George, C. Escaravage, G. Champier, W. Schröter: Velocities of screw and 60°-dislocations in silicon, Phys. Status Solidi (b) 53, 483–496 (1972)ADSCrossRef

39.62.

M. Imai, K. Sumino: Insitu x-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon-crystals, Philos. Mag. A 47(4), 599–621 (1983)ADSCrossRef

39.63.

B.Y. Farber, V.I. Nikitenko: Change of dislocation mobility characteristics in silicon single-crystals at elevated-temperatures, Phys. Status Solidi (a) 73(1), K141–144 (1982)ADSCrossRef

39.64.

I. Yonenaga, K. Sumino: Dislocation velocity in indium-phospide, Appl. Phys. Lett. 58(1), 48–50 (1991)ADSCrossRef

39.65.

H. Nagai: Dislocation velocities in indium phospide, Jpn. J. Appl. Phys. 20(4), 793–794 (1981)ADSCrossRef

39.66.

K. Maeda, S. Takeuchi: Recombination enhanced glide in InP single crystals, Appl. Phys. Lett. 42(8), 664–666 (1983)ADSCrossRef

39.67.

F. Louchet: On the mobility of dislocations in silicon by insitu straining in a high-voltage electron-microscope, Philos. Mag. 43(5), 1289–1297 (1981)ADSCrossRef

39.68.

V. Celli, M. Kabler, T. Ninoyama, R. Thomson: Theory of dislocation mobility in semiconductors, Phys. Rev. 131(1), 58–72 (1963)ADSCrossRef

39.69.

V.V. Rybin, A.N. Orlov: Theory of dislocation motion in low-velocity range, Sov. Phys. Solid State 11, 2635–2641 (1970)

39.70.

S. Öberg, P.K. Sitch, R. Jones, M.I. Heggie: First-principles calculations of the energy barrier to dislocation motion in Si and GaAs, Phys. Rev. B 51(19), 13138–13145 (1995)ADSCrossRef

39.71.

V.V. Bulatov, S. Yip, A.S. Argon: Atomic modes of dislocation mobility in silicon, Philos. Mag. A 72(2), 453–496 (1995)ADSCrossRef

39.72.

H.R. Kolar, J.C.H. Spencer, H. Alexander: Observation of moving dislocation kinks and unpinning, Phys. Rev. Lett. 77(19), 4031–4034 (1996)ADSCrossRef

39.73.

H.J. Möller: The movement of dissociated dislocations in the diamond–cubic structure, Acta Metall. 26, 963–973 (1977)CrossRef

39.74.

P. Haasen: Kink formation in charged dislocation, Phys. Status Solidi (a) 28(1), 145–155 (1975)ADSCrossRef

39.75.

P.B. Hirsch: Mechanism for the effect of doping on dislocation mobility, J. Phys. 40(6), 117–121 (1979)

39.76.

K. Sumino, I. Yonenaga: Dislocation dynamics and mechanical behavior of elemental and compound semiconductors, Phys. Status Solidi (a) 138, 573–581 (1993)ADSCrossRef

39.77.

K. Sumino, H. Harada: In situ x-ray topographic studies of the generation and the multiplication processes of dislocations in silicon crystals at elevated temperature, Philos. Mag. A 44(6), 1319–1334 (1981)ADSCrossRef

39.78.

P. Franciosi, A. Zaoui: Multislip in fcc. crystals: A theoretical approach compared with experimental data, Acta Metall. 30, 1627–1637 (1982)CrossRef

39.79.

A. Moulin, M. Condat, L.P. Kubin: Mesoscale modelling of the yield point properties of silicon crystals, Acta Metall. 47(10), 2879–2888 (1999)

39.80.

H. Alexander, J.J. Crawford: Latent hardening of germanium crystals, Phys. Status Solidi (b) 222, 41–49 (2000)ADSCrossRef

39.81.

A.A. Chernov: Modern Crystallography III. Crystal Growth (Springer, Berlin 1984)CrossRef

39.82.

H. Klapper: Generation and propagation of dislocations during crystal growth, Mater. Chem. Phys. 66, 101–109 (2000)CrossRef

39.83.

G. Dhanaraj, B. Raghothamachar, J. Bai, H. Chung, M. Dudley: Synchrotron x-ray topographic characterization of defects in InP bulk crystals, Proc. Int. Conf. Indium Phosphide Relat. Mater. (2005) pp. 643–648

39.84.

G.T. Brown, B. Cockayne, W.R. Macewan: Deformation behavior of single crystals of InP in uniaxial compression, J. Mater. Sci. 15, 1469–1477 (1980)ADSCrossRef

39.85.

S. Pendurti: Modeling Dislocation Generation in High Pressure Czochralski Growth of InP Single Crystals. Ph.D. Thesis (State University of New York, Stony Brook 2003)

39.86.

A.S. Jordan: Some thermal and mechanical properties of InP essential to crystal growth modeling, J. Cryst. Growth 71, 559–565 (1985)ADSCrossRef

39.87.

H. Siethoff: The plasticity of elemental and compound semiconductors, Semicond. Semimet. 37, 143–187 (1992)CrossRef

39.88.

J.C. Simo, T.J.R. Hughes: Computational Inelasticity (Springer, New York 1998)MATH

39.89.

H. Zhang, V. Prasad: A multizone adaptive process model for low and high pressure crystal growth, J. Cryst. Growth 155, 47–65 (1995)ADSCrossRef

39.90.

P. Rudolph, M. Jurisch: Bulk growth of GaAs – An overview, J. Cryst. Growth 199(1), 325–335 (1999)ADSCrossRef

39.91.

V.A. Antonov, V.G. Elsakov, T.I. Olkhovikova, V.V. Selin: Dislocations and 90°-twins in LEC-grown InP crystals, J. Cryst. Growth 235(1–4), 35–39 (2002)ADSCrossRef

39.92.

T.-C. Chen, H.-C. Wu, C.-I. Weng: The effect of interface shape on anisotropic thermal stress of bulk single crystal during Czochralski growth, J. Cryst. Growth 173, 367–379 (1997)ADSCrossRef

39.93.

J. Matsui: Study of strain variation in LEC-grown GaAs bulk crystals by synchotron radiation x-ray, Appl. Surf. Sci. 50, 1–8 (1991)ADSCrossRef

39.94.

H.M. Buchheit, A. Khoukh, M. Bejar, S.K. Krawczyk, R.C. Blanchet: Residual strain mapping in III–V materials by spectrally resolving scanning photoluminescence, Microelectron. J. 30(7), 651–657 (1999)CrossRef

39.95.

S. Pendurti, V. Prasad, H. Zhang: Modelling dislocation generation in high pressure Czochralski growth of InP single crystals: Part I. Construction of a visco-plastic deformation model, Model. Simul. Mater. Sci. Eng. 13, 249–266 (2005)ADSCrossRef

39.96.

V. Prasad, H. Zhang: Transport phenomena in Czochralski crystal growth processes, Adv. Heat Transf. 30, 313–435 (1997)CrossRef

39.97.

A.G. Elliot, A. Flat, D.A. Vanderwater: Silicon incorporation in LEC growth of single-crystal gallium-arsenide, J. Cryst. Growth 121(3), 349–359 (1992)ADSCrossRef

39.98.

M. Neubert, P. Rudolph: Growth of semi-insulating GaAs crystals in low temperature gradients by using the vapour pressure controlled Czochralski method (VCZ), Prog. Cryst. Growth Charact. Mater. 43(2/3), 119–185 (2001)CrossRef

39.99.

G. Müller, J. Völkl, E. Tomzig: Thermal analysis of LEC InP growth, J. Cryst. Growth 64(1), 40–47 (1983)ADSCrossRef

39.100.

A.R. Von Neida, A.S. Jordan: Reducing dislocations in GaAs and InP, J. Met. 38, 35–40 (1986)

39.101.

A.G. Elliot, C.L. Wei, R. Farraro, G. Woolhouse, M. Scott, R. Hiskes: Low dislocation density, large diameter, liquid encapsulated Czochralski growth of GaAs, J. Cryst. Growth 70, 169–178 (1984)ADSCrossRef

39.102.

K. Katagiri, S. Yamazaki, A. Takagi, O. Oda, H. Araki, I. Tsuboya: LEC growth of large diameter InP single crystals doped with Sn and with S, Inst. Phys. Conf. Ser. 79, 67–72 (1986)

39.103.

R. Hirano, M. Uchida: Reduction of dislocation densities in InP single crystals by the LEC method using thermal baffles, J. Electron. Mater. 25, 347–351 (1996)ADSCrossRef

39.104.

R. Hirano: Growth of low etch pit density homogeneous 2′′ InP crystals using a newly developed thermal baffle, Jpn. J. Appl. Phys. 38(2B), 969–971 (1999)ADSMathSciNetCrossRef

39.105.

K. Terashima, T. Fukuda: A new magnetic–field applied pulling apparatus for LEC GaAs single-crystal growth, J. Cryst. Growth 63, 423–425 (1983)ADSCrossRef

39.106.

H. Miyairi, T. Inada, M. Eguchi, T. Fukuda: Growth and properties of InP single crystals grown by the magnetic-field applied LEC method, J. Cryst. Growth 79(1–3), 291–295 (1986)ADSCrossRef

39.107.

J. Osaka, H. Kohda, T. Kobayashi, K. Hoshikawa: Homogeneity of vertical magnetic-field applied LEC GaAs crystal, Jpn. J. Appl. Phys. Part 2 – Lett. 23(4), L194–197 (1984)

39.108.

S. Ozawa, T. Kimura, J. Kobayashi, T. Fukuda: Programmed magnetic-field applied liquid encapsulated Czochralski crystal-growth, Appl. Phys. Lett. 50(6), 329–331 (1987)ADSCrossRef

39.109.

H. Kohda, K. Yamada, H. Nakanishi, T. Kobayashi, J. Osaka, K. Hoshikawa: Crystal-growth of completely dislocation-free and striation-free GaAs, J. Cryst. Growth 71(3), 813–816 (1985)ADSCrossRef

39.110.

S. Pendurti, H. Zhang, V. Prasad: Modeling dislocation generation in high pressure Czochralski growth of InP single crystals: Part II, Model. Simul. Mater. Sci. Eng. 13, 267–297 (2005)ADSCrossRef

Titel: Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth
verfasst von: Vishwanath (Vish) Prasad
Srinivas Pendurti
Verlag: Springer Berlin Heidelberg
Buch: Springer Handbook of Crystal Growth
Print ISBN: 978-3-540-74182-4

Electronic ISBN: 978-3-540-74761-1

Copyright-Jahr: 2010
DOI: https://doi.org/10.1007/978-3-540-74761-1_39

Premium Partner

Marktübersichten

Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.

Zur Marktübersicht