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2017 | OriginalPaper | Buchkapitel

Nanofocused X-Ray Beam to Reprogram Secure Circuits

verfasst von : Stéphanie Anceau, Pierre Bleuet, Jessy Clédière, Laurent Maingault, Jean-luc Rainard, Rémi Tucoulou

Erschienen in: Cryptographic Hardware and Embedded Systems – CHES 2017

Verlag: Springer International Publishing

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Abstract

Synchrotron-based X-ray nanobeams are investigated as a tool to perturb microcontroller circuits. An intense hard X-ray focused beam of a few tens of nanometers is used to target the flash, EEPROM and RAM memory of a circuit. The obtained results show that it is possible to corrupt a single transistor in a semi-permanent state. A simple heat treatment can remove the induced effect, thus making the corruption reversible. An attack on a code stored in flash demonstrates unambiguously that this new technique can be a threat to the security of integrated circuits.

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Literatur
1.
Zurück zum Zitat Skorobogatov, S.P., Anderson, R.J.: Optical fault induction attacks. In: Kaliski, B.S., Koç, K., Paar, C. (eds.) CHES 2002. LNCS, vol. 2523, pp. 2–12. Springer, Heidelberg (2003). doi:10.1007/3-540-36400-5_2 CrossRef Skorobogatov, S.P., Anderson, R.J.: Optical fault induction attacks. In: Kaliski, B.S., Koç, K., Paar, C. (eds.) CHES 2002. LNCS, vol. 2523, pp. 2–12. Springer, Heidelberg (2003). doi:10.​1007/​3-540-36400-5_​2 CrossRef
2.
Zurück zum Zitat Habing, D.H.: The use of lasers to simulate radiation-induced transients in semiconductor devices and circuits. IEEE Trans. Nucl. Sci. 12, 91–100 (1965)CrossRef Habing, D.H.: The use of lasers to simulate radiation-induced transients in semiconductor devices and circuits. IEEE Trans. Nucl. Sci. 12, 91–100 (1965)CrossRef
3.
Zurück zum Zitat Henley, F.J.: Logic failure analysis of CMOS VLSI using a laser probe. In: 22nd Annual Reliability Physics Symposium, pp. 69–75 (1984) Henley, F.J.: Logic failure analysis of CMOS VLSI using a laser probe. In: 22nd Annual Reliability Physics Symposium, pp. 69–75 (1984)
4.
Zurück zum Zitat Burns, D., Pronobis, M., Eldering, C., Hillman, R.: Reliability/design assessment by internal-node timing-margin analysis using laser photocurrent injection. In: 22nd Annual Proceedings on Reliability Physics 1984, pp. 76–82. IEEE (1984) Burns, D., Pronobis, M., Eldering, C., Hillman, R.: Reliability/design assessment by internal-node timing-margin analysis using laser photocurrent injection. In: 22nd Annual Proceedings on Reliability Physics 1984, pp. 76–82. IEEE (1984)
5.
Zurück zum Zitat Hériveaux, L., Clédière, J., Anceau, S.: Electrical modeling of the effect of photoelectric laser fault injection on bulk CMOS design. In: 39th International Symposium for Testing and Failure Analysis ISTFA (2013) Hériveaux, L., Clédière, J., Anceau, S.: Electrical modeling of the effect of photoelectric laser fault injection on bulk CMOS design. In: 39th International Symposium for Testing and Failure Analysis ISTFA (2013)
6.
Zurück zum Zitat Quisquatter, J.-J., Samyde, D.: Eddy current for magnetic analysis with active sensor. In: Proceedings of Esmart (2002) Quisquatter, J.-J., Samyde, D.: Eddy current for magnetic analysis with active sensor. In: Proceedings of Esmart (2002)
7.
Zurück zum Zitat Schmidt, J.-M., Hutter, M.: Optical and EM fault-attacks on CRT-based RSA: concrete results. In: 15th Austrian Workshop on Microelectronics, Austrochip (2007) Schmidt, J.-M., Hutter, M.: Optical and EM fault-attacks on CRT-based RSA: concrete results. In: 15th Austrian Workshop on Microelectronics, Austrochip (2007)
8.
Zurück zum Zitat Poucheret, F., Tobich, K., Lisart, M., Chusseau, L., Robisson, B., Maurine, P.: Local and direct EM injection of power into CMOS integrated circuits. In: Fault Diagnosis and Tolerance in Cryptography, FDTC (2011) Poucheret, F., Tobich, K., Lisart, M., Chusseau, L., Robisson, B., Maurine, P.: Local and direct EM injection of power into CMOS integrated circuits. In: Fault Diagnosis and Tolerance in Cryptography, FDTC (2011)
9.
Zurück zum Zitat Micheloni, R., Crippa, L., Marelli, A.: Inside NAND Flash Memories, pp. 537–571. Springer, Heidelberg (2010)CrossRef Micheloni, R., Crippa, L., Marelli, A.: Inside NAND Flash Memories, pp. 537–571. Springer, Heidelberg (2010)CrossRef
10.
Zurück zum Zitat Oldham, T.R., McLean, F.B.: Total ionizing dose effects in MOS oxides and devices. IEEE Trans. Nucl. Sci. 50, 483–499 (2003)CrossRef Oldham, T.R., McLean, F.B.: Total ionizing dose effects in MOS oxides and devices. IEEE Trans. Nucl. Sci. 50, 483–499 (2003)CrossRef
11.
Zurück zum Zitat Oldham, T.R.: Ionizing Radiation Effect in MOS Oxides. Advances in Solid State Electronics and Technology (ASSET) Series. World Scientific, Singapore (1999) Oldham, T.R.: Ionizing Radiation Effect in MOS Oxides. Advances in Solid State Electronics and Technology (ASSET) Series. World Scientific, Singapore (1999)
12.
Zurück zum Zitat Gerardin, S., Bagatin, M., Paccagnella, A., Grürmann, K., Gliem, F., Oldham, T.R., Irom, F., Nguyen, D.N.: Radiation effects in flash memories. IEEE Trans. Nucl. Sci. 60(3), 1953–1969 (2013)CrossRef Gerardin, S., Bagatin, M., Paccagnella, A., Grürmann, K., Gliem, F., Oldham, T.R., Irom, F., Nguyen, D.N.: Radiation effects in flash memories. IEEE Trans. Nucl. Sci. 60(3), 1953–1969 (2013)CrossRef
13.
Zurück zum Zitat Bar-El, H., Choukri, H., Naccache, D., Tunstall, M., Whelan, C.: The Sorcerer’s Apprentice Guide to Fault Attacks. IACR Cryptology ePrint Archive (2004) Bar-El, H., Choukri, H., Naccache, D., Tunstall, M., Whelan, C.: The Sorcerer’s Apprentice Guide to Fault Attacks. IACR Cryptology ePrint Archive (2004)
14.
Zurück zum Zitat Soucarros, M., Clédière, J., Dumas, C., Elbaz-Vincent, P.: Fault analysis and evaluation of a true random number generator embedded in a processor. J. Electron. Test. 29(3), 367–381 (2013)CrossRef Soucarros, M., Clédière, J., Dumas, C., Elbaz-Vincent, P.: Fault analysis and evaluation of a true random number generator embedded in a processor. J. Electron. Test. 29(3), 367–381 (2013)CrossRef
15.
Zurück zum Zitat Martinez-Criado, G., Villanova, J., Tucoulou, R., Salomon, D., Suuronen, J.-P., Labouré, S., Guilloud, C., Valls, V., Barrett, R., Gagliardini, E., Dabin, Y., Baker, R., Bohic, S., Cohen, C., Morse, J.: ID16B: a hard X-ray nanoprobe beamline at the ESRF for nano-analysis. J. Synchrotron Radiat. 23(1), 344–352 (2016)CrossRef Martinez-Criado, G., Villanova, J., Tucoulou, R., Salomon, D., Suuronen, J.-P., Labouré, S., Guilloud, C., Valls, V., Barrett, R., Gagliardini, E., Dabin, Y., Baker, R., Bohic, S., Cohen, C., Morse, J.: ID16B: a hard X-ray nanoprobe beamline at the ESRF for nano-analysis. J. Synchrotron Radiat. 23(1), 344–352 (2016)CrossRef
17.
Zurück zum Zitat Ma, T.P., Dressendorfer, P.V.: Ionizing Radiation Effects in MOS Devices and Circuits. Wiley, New York (1989) Ma, T.P., Dressendorfer, P.V.: Ionizing Radiation Effects in MOS Devices and Circuits. Wiley, New York (1989)
18.
Zurück zum Zitat Shaneyfelt, M.R., Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Hughes, K.L., Sexton, F.W.: Field dependence of interface trap buildup in polysilicon and metal gate MOS devices. IEEE Trans. Nucl. Sci. 37(6), 16–32 (1990)CrossRef Shaneyfelt, M.R., Schwank, J.R., Fleetwood, D.M., Winokur, P.S., Hughes, K.L., Sexton, F.W.: Field dependence of interface trap buildup in polysilicon and metal gate MOS devices. IEEE Trans. Nucl. Sci. 37(6), 16–32 (1990)CrossRef
19.
Zurück zum Zitat Caywood, J., Prickett, B.: Radiation-induced soft errors and floating gate memories. In: Proceedings of 21st Annual Reliability Physics Symposium, pp. 167–172 (1983) Caywood, J., Prickett, B.: Radiation-induced soft errors and floating gate memories. In: Proceedings of 21st Annual Reliability Physics Symposium, pp. 167–172 (1983)
20.
Zurück zum Zitat Snyder, E., McWhorter, P., Dellin, T., Sweetman, J.: Radiation response of floating gate EEPROM memory cells. IEEE Trans. Nucl. Sci. 36, 2131–2139 (1989)CrossRef Snyder, E., McWhorter, P., Dellin, T., Sweetman, J.: Radiation response of floating gate EEPROM memory cells. IEEE Trans. Nucl. Sci. 36, 2131–2139 (1989)CrossRef
21.
Zurück zum Zitat McNulty, P., Yow, S., Scheick, L., Abdel-Kader, W.: Charge removal from FGMOS floating gates. IEEE Trans. Nucl. Sci. 49, 3016–3021 (2002)CrossRef McNulty, P., Yow, S., Scheick, L., Abdel-Kader, W.: Charge removal from FGMOS floating gates. IEEE Trans. Nucl. Sci. 49, 3016–3021 (2002)CrossRef
22.
Zurück zum Zitat Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M.: Ionizing radiation effects on floating gates. Appl. Phys. Lett. 85, 485–487 (2004)CrossRef Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M.: Ionizing radiation effects on floating gates. Appl. Phys. Lett. 85, 485–487 (2004)CrossRef
23.
Zurück zum Zitat Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Caprara, P., Lora, S.: A model for TID effects on floating gate memory cells. IEEE Trans. Nucl. Sci. 51, 3753–3758 (2004)CrossRef Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Caprara, P., Lora, S.: A model for TID effects on floating gate memory cells. IEEE Trans. Nucl. Sci. 51, 3753–3758 (2004)CrossRef
24.
Zurück zum Zitat Cellere, G., Paccagnella, A., Lora, S., Pozza, A., Tao, G., Scarpa, A.: Charge loss after 60 Co irradiation of flash arrays. IEEE Trans. Nucl. Sci. 51, 2912–2916 (2004)CrossRef Cellere, G., Paccagnella, A., Lora, S., Pozza, A., Tao, G., Scarpa, A.: Charge loss after 60 Co irradiation of flash arrays. IEEE Trans. Nucl. Sci. 51, 2912–2916 (2004)CrossRef
25.
Zurück zum Zitat Wang, J., Samiee, S., Chen, H.-S., Huang, C.-K., Cheung, M., Borillo, J., Sun, S.-N., Cronquist, B., McCollum, J.: Total ionizing dose effects on flash-based field programmable gate array. IEEE Trans. Nucl. Sci. 51, 3759–3766 (2004)CrossRef Wang, J., Samiee, S., Chen, H.-S., Huang, C.-K., Cheung, M., Borillo, J., Sun, S.-N., Cronquist, B., McCollum, J.: Total ionizing dose effects on flash-based field programmable gate array. IEEE Trans. Nucl. Sci. 51, 3759–3766 (2004)CrossRef
26.
Zurück zum Zitat Wang, J., Kuganesan, G., Charest, N., Cronquist, B.: Biased-irradiation characteristics of the floating gate switch in FPGA. In: Proceedings of IEEE Radiation Effects Data Workshop, pp. 101–104, July 2006 Wang, J., Kuganesan, G., Charest, N., Cronquist, B.: Biased-irradiation characteristics of the floating gate switch in FPGA. In: Proceedings of IEEE Radiation Effects Data Workshop, pp. 101–104, July 2006
27.
Zurück zum Zitat Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Schwank, J., Shaneyfelt, M., Paillet, P.: Total ionizing dose effects in NOR and NAND flash memories. IEEE Trans. Nucl. Sci. 54, 1066–1070 (2007)CrossRef Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Beltrami, S., Schwank, J., Shaneyfelt, M., Paillet, P.: Total ionizing dose effects in NOR and NAND flash memories. IEEE Trans. Nucl. Sci. 54, 1066–1070 (2007)CrossRef
28.
Zurück zum Zitat Nguyen, D.N., Lee, C.I., Johnston, A.H.: Total ionizing dose effects on flash memories. In: IEEE Radiation Effect Data Workshop, p. 100 (1998) Nguyen, D.N., Lee, C.I., Johnston, A.H.: Total ionizing dose effects on flash memories. In: IEEE Radiation Effect Data Workshop, p. 100 (1998)
29.
Zurück zum Zitat Sharma, A.K.: Semiconductor memory radiation effects. In: Semiconductor Memories, Technology, Testing and Reliability, Chap. 7, p. 328. IEEE (1997) Sharma, A.K.: Semiconductor memory radiation effects. In: Semiconductor Memories, Technology, Testing and Reliability, Chap. 7, p. 328. IEEE (1997)
Metadaten
Titel
Nanofocused X-Ray Beam to Reprogram Secure Circuits
verfasst von
Stéphanie Anceau
Pierre Bleuet
Jessy Clédière
Laurent Maingault
Jean-luc Rainard
Rémi Tucoulou
Copyright-Jahr
2017
DOI
https://doi.org/10.1007/978-3-319-66787-4_9