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2021 | OriginalPaper | Buchkapitel

Nanowire Field-Effect Transistors

verfasst von : Junichi Motohisa, Shinjiro Hara

Erschienen in: Fundamental Properties of Semiconductor Nanowires

Verlag: Springer Singapore

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Abstract

Vertical field-effect transistors (FETs) using semiconductor nanowires (NWs) formed by bottom-up approach are expected to outperform conventional planar transistors owing to their compatibility with surrounding-gate (SG) structures, possible heterogeneous integration with various kinds of materials including Si, and so on. In this chapter, basics, current status, and the possibility of vertical NW-FETs are described. We first introduce the importance of SG geometry from a viewpoint of the device application as well as the general advantage of vertical NW-FETs. Next, the fabrication of the NWs, where the site controllability is important for FET applications, are described with the main emphasis on the selective-area (SA) growth. Then, the current status and some of the issues for further development of their performances are explained. Some of the new directions including tunnel FETs (TFETs) and spin FETs to go beyond the classical limit of the FET will also be described before the summary of this chapter.

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Titel: Nanowire Field-Effect Transistors
verfasst von: Junichi Motohisa
Shinjiro Hara
Verlag: Springer Singapore
Buch: Fundamental Properties of Semiconductor Nanowires
Print ISBN: 978-981-15-9049-8

Electronic ISBN: 978-981-15-9050-4

Copyright-Jahr: 2021
DOI: https://doi.org/10.1007/978-981-15-9050-4_9

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