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Erschienen in: Journal of Computational Electronics 3/2017

13.05.2017

New technique to extend the vertical depletion region at SOI-LDMOSFETs

verfasst von: Hojjat Allah Mansoori, Ali A. Orouji, A. Dideban

Erschienen in: Journal of Computational Electronics | Ausgabe 3/2017

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Abstract

In order to obtain an excellent performance for silicon-on-insulator lateral double-diffused MOSFET (SOI-LDMOSFET) transistors, we introduce a new technique to extend the depletion region along the vertical direction in the drift region. The proposed structure is called vertically depleted LDMOSFET (VD-LDMOSFET). The VD-LDMOSFET structure consists of a buried metal layer in the oxide region. The drift region of the VD-LDMOSFET is vertically depleted, not only from the buried oxide, but also by the incorporated metal layer in the buried oxide. Therefore, a higher drift doping density is achieved by an extension of the depletion region in the drift region and the on-state resistance \(({R}_{\mathrm{ON}})\) reduces without degradation of the breakdown voltage. Also, an additional peak is created in the electric field distribution of the proposed structure and causes a reduction of the electric field peak near the gate and the drift region junction at the top surface of the device. Therefore, the breakdown voltage \(({V}_{\mathrm{BR}})\) of the VD-LDMOSFET structure increases. The simulation results illustrate that by optimizing the doping density of the drift region and the dimensions of the metal layer in the proposed structure, the on-state resistance (28.9%) and the breakdown voltage (36.1%) are improved greatly and a superior tradeoff is achieved compared with a conventional SOI-LDMOSFET (C-LDMOSFET) structure.

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Metadaten
Titel
New technique to extend the vertical depletion region at SOI-LDMOSFETs
verfasst von
Hojjat Allah Mansoori
Ali A. Orouji
A. Dideban
Publikationsdatum
13.05.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 3/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-0994-7

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