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Erschienen in:
2007 | OriginalPaper | Buchkapitel
Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism
verfasst von : Hong-Hyun Park, Sung-Min Hong, Seonghoon Jin, Hong Shick Min, Young June Park
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
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A new deterministic approach to the electronic noise calculation based on the non-equilibrium Green’s function formalism with the electron-phonon scattering mechanisms is presented for nanoscale devices, and the diffusion noise phenomena at zero frequency are investigated. Our approach can handle the quantum effects naturally and it gives physical insight about the noise in nanoscale devices. As an application, silicon nanowire field effect transistor is considered and the numerical results show that the Johnson-Nyquist theorem is satisfied at equilibrium and the excess noise occurs in the presence of current transport.