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Erschienen in:
2009 | OriginalPaper | Buchkapitel
Numerical Simulation of Charge Transport in Semiconductor Devices Using Mixed Finite Elements
verfasst von : Riccardo Sacco
Erschienen in: Mixed Finite Element Technologies
Verlag: Springer Vienna
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In this lecture, we present the basic mathematical and numerical tools for semiconductor device simulation using the Drift-Diffusion model. The Gummel’s decoupled fixed point map is first reviewed, and then the dual-mixed Formulation of the diffusion-advection-reaction (DAR) differential problems resulting from decoupling is considered. The Galerkin finite element discretization of the weak mixed form is discussed, with a proper treatment of the flux mass matrix that leads to a mixed finite volume approximation of the DAR equation. Several numerical examples are included to validate the proposed procedure.
