Numerical Simulation of Physical Vapour Transport Crystal Growth Processes by a Finite Volume Solution Algorithm

A mathematical model for the numerical simulation of physical vapour transport (PVT) crystal growth processes is presented in this paper. The model is based on the two-dimensional conservation equations for mass, momentum, energy and chemical species. Radiative heat transfer and species generation/consumption by heterogeneous chemical reactions are taken into account. The equations are solved by a finite volume algorithm on block-structured grids using the multi-grid technique to speed up convergence. The efficiency of the method is demonstrated. Results on the simulation of the SiC bulk growth process are given, and physical phenomena involved in the growth process are discussed