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Journal of Materials Science

Erschienen in:

01.01.2020 | Electronic materials

Ohmic contact in graphene/SnSe₂ Van Der Waals heterostructures and its device performance from ab initio simulation

verfasst von: Hong Li, Peipei Xu, Jiakun Liang, Fengbin Liu, Jing Luo, Jing Lu

Erschienen in: Journal of Materials Science | Ausgabe 10/2020

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Abstract

Van der Waals (vdW) type metallic/semiconducting heterostructures have attracted much attention for applications like nanoelectronics. The electronic properties of graphene/SnSe₂ vdW heterostructure are investigated by the first-principles calculation. The band dispersions of both the graphene and SnSe₂ layers are well preserved in the graphene/SnSe₂ vdW heterostructure. Notably, n-type Ohmic contact is found at the graphene/SnSe₂ vdW interface so that graphene is a fantastic electrode for the SnSe₂ Schottky barrier field-effect transistor (SBFET). The on-state current of the 10-nm-gate-long ML SnSe₂ SBFET with graphene electrode is 1535 µA/µm for high-performance (HP) application, which is twice that of the ML MoS₂ SBFET with bulk Ti electrode and exceeds the requirement of the International Technology Roadmap for Semiconductors for HP devices.

Vorheriger Artikel Effect of carbon nanotube on radiation resistance of CNT-Cu nanocomposite: MD simulation

Nächster Artikel Band offset determination of p-NiO/n-TiO2 heterojunctions for applications in high-performance UV photodetectors

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Wang QH, Kalantarzadeh K, Kis A, Coleman JN, Strano MS (2012) Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol 7(11):699–712. https://doi.org/10.1038/nnano.2012.193 CrossRef

Yu P, Yu X, Lu W, Lin H, Sun L, Du K, Liu F, Fu W, Zeng Q, Shen Z, Jin C, Wang QJ, Liu Z (2016) Fast photoresponse from 1T tin diselenide atomic layers. Adv Funct Mater 26(1):137–145. https://doi.org/10.1002/adfm.201503789 CrossRef

Su Y, Ebrish MA, Olson EJ, Koester SJ (2013) SnSe₂ field-effect transistors with high drive current. Appl Phys Lett 103(26):263104. https://doi.org/10.1063/1.4857495 CrossRef

Pei T, Bao L, Wang G, Ma R, Yang H, Li J, Gu C, Pantelides S, Du S, Gao H-j (2016) Few-layer SnSe₂ transistors with high on/off ratios. Appl Phys Lett 108(5):053506. https://doi.org/10.1063/1.4941394 CrossRef

Zhou X, Gan L, Tian W, Zhang Q, Jin S, Li H, Bando Y, Golberg D, Zhai T (2015) Ultrathin SnSe₂ flakes grown by chemical vapor deposition for high-performance photodetectors. Adv Mater 27(48):8035–8041. https://doi.org/10.1002/adma.201503873 CrossRef

Young Woon P, Sahng-Kyoon J, Jae Ho J, Sanjib Baran R, Kamran A, Jeong K, Yumin S, Maeng-Je S, Jungh Wa K, Zonghoon L, Minju K, Yeonjin Y, Jinwoo K, Do Young N, Seung-Hyun C (2017) Molecular beam epitaxy of large-area SnSe₂ with monolayer thickness fluctuation. 2D Mater 4(1):014006. https://doi.org/10.1088/2053-1583/aa51a2 CrossRef

Huang Z, Wenxu Z, Wanli Z (2016) Computational search for two-dimensional MX₂ semiconductors with possible high electron mobility at room temperature. Materials 9(9):716. https://doi.org/10.3390/ma9090716 CrossRef

Aamir S, Samad A, Shin YH (2017) Ultra low lattice thermal conductivity and high carrier mobility of monolayer SnS₂ and SnSe₂: a first principles study. Phys Chem Chem Phys 19(31):20677–20683. https://doi.org/10.1039/C7CP03748A CrossRef

Li G, Ding G, Gao G (2017) Thermoelectric properties of SnSe₂ monolayer. J Phys: Condens Matter 29(1):015001. https://doi.org/10.1088/0953-8984/29/1/015001 CrossRef

10.

Xiang H, Xu B, Xia Y, Yin J, Liu Z (2016) Strain tunable magnetism in SnX₂ (X = S, Se) monolayers by hole doping. Sci Rep 6:39218. https://doi.org/10.1038/srep39218 CrossRef

11.

Wang Y, Yang RX, Quhe R, Zhong H, Cong L, Ye M, Ni Z, Song Z, Yang J, Shi J (2015) Does p-type ohmic contact exist in WSe₂-metal interfaces? Nanoscale 8(2):1179–1191. https://doi.org/10.1039/C5NR06204G CrossRef

12.

Ni Z, Ye M, Ma J, Wang Y, Quhe R, Zheng J, Dai L, Yu D, Shi J, Yang J (2016) Performance upper limit of sub-10 nm monolayer MoS₂ transistors. Adv Electron Mater 2(9):1600191. https://doi.org/10.1002/aelm.201600191 CrossRef

13.

Min KA, Park J, Wallace RM, Cho K, Hong S (2017) Reduction of Fermi level pinning at Au–MoS₂ interfaces by atomic passivation on Au surface. 2D Mater 4(1):015019. https://doi.org/10.1088/2053-1583/4/1/015019 CrossRef

14.

Liu Y, Stradins P, Wei S-H (2016) Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier. Sci Adv 2(4):e1600069. https://doi.org/10.1126/sciadv.1600069 CrossRef

15.

Yanwu Z, Shanthi M, Weiwei C, Xuesong L, Won SJ, Potts JR, Ruoff RS (2010) Graphene and graphene oxide: synthesis, properties, and applications. Adv Mater 22(35):3906–3924. https://doi.org/10.1002/adma.201001068 CrossRef

16.

Goki E, Giovanni F, Manish C (2008) Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material. Nat Nanotechnol 3(5):270–274. https://doi.org/10.1038/nnano.2008.83 CrossRef

17.

Zhang F, Li W, Ma Y, Dai X (2018) Schottky barrier tuning of the graphene/SnS₂ van der Waals heterostructures through electric field. Solid State Commun 271:56–61. https://doi.org/10.1016/j.ssc.2017.12.026 CrossRef

18.

Quhe R, Wang Y, Ye M, Zhang Q, Yang J, Lu P, Lei M, Lu J (2017) Black phosphorus transistors with van der Waals-type electrical contacts. Nanoscale 9(37):14047–14057. https://doi.org/10.1039/C7NR03941G CrossRef

19.

Si C, Lin Z, Zhou J, Sun Z (2017) Controllable Schottky barrier in GaSe/graphene heterostructure: the role of interface dipole. 2D Mater 4(1):015027. https://doi.org/10.1088/2053-1583/4/1/015027 CrossRef

20.

Jongwon Y, Woojin P, Ga-Yeong B, Yonghun K, Hun Soo J, Yujun H, Sung Kwan L, Yung Ho K, Woong-Ki H, Byoung Hun L (2013) Highly flexible and transparent multilayer MoS₂ transistors with graphene electrodes. Small 9(19):3295–3300. https://doi.org/10.1002/smll.201300134 CrossRef

21.

Chuang HJ, Tan X, Ghimire NJ, Perera MM, Chamlagain B, Cheng MM, Yan J, Mandrus D, Tománek D, Zhou Z (2014) High mobility WSe₂ p- and n-type field-effect transistors contacted by highly doped graphene for low-resistance contacts. Nano Lett 14(6):3594–3601. https://doi.org/10.1021/nl501275p CrossRef

22.

Xie L, Liao M, Wang S, Yu H, Du L, Tang J, Zhao J, Zhang J, Chen P, Lu X (2017) Graphene-contacted ultrashort channel monolayer MoS₂ transistors. Adv Mater 29(37):1702522. https://doi.org/10.1002/adma.201702522 CrossRef

23.

Zhang YM, Fan JQ, Wang WL, Zhang D, Xue QK (2018) Observation of interface superconductivity in a SnSe₂-epitaxial graphene van der Waals heterostructure. Phys Rev B 98:220508. https://doi.org/10.1103/PhysRevB.98.220508 CrossRef

24.

Atomistix ToolKit version 2017.2, QuantumWise A/S. Copenhagen, Denmark. https://www.synopsys.com/silicon/quantumatk.html

25.

Brandbyge M (2002) Density-functional method for nonequilibrium electron transport. Phys Rev B 65(16):5401. https://doi.org/10.1103/PhysRevB.65.165401 CrossRef

26.

Soler JM, Artacho E, Gale JD, García A, Junquera J, Ordejón P, Sánchez-Portal D (2002) The SIESTA method for ab initio order-N materials simulation. J Phys: Condens Matter 14(11):2745–2779. https://doi.org/10.1088/0953-8984/14/11/302 CrossRef

27.

Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 78(18):3865. https://doi.org/10.1103/physrevlett.77.3865 CrossRef

28.

Monkhorst HJ (1976) Special points for Brillouin-zone integrations. Phys Rev B 13(12):5188–5192. https://doi.org/10.1103/PhysRevB.16.1746 CrossRef

29.

Das S, Zhang W, Demarteau M, Hoffmann A, Dubey M, Roelofs A (2014) Tunable transport gap in phosphorene. Nano Lett 14(10):5733–5739. https://doi.org/10.1021/nl5025535 CrossRef

30.

Pan Y, Wang Y, Ye M, Quhe R, Zhong H, Song Z, Peng X, Yu D, Yang J, Shi J (2016) Monolayer phosphorene-metal contacts. Chem Mater 28:2100–2109. https://doi.org/10.1021/acs.chemmater.5b04899 CrossRef

31.

Pan Y, Yang D, Wang Y, Meng Y, Han Z, Quhe R, Zhang X, Li J, Guo W, Li Y (2017) Schottky barriers in bilayer phosphorene transistors. ACS Appl Mater Interface 9:12694–12705. https://doi.org/10.1021/acsami.6b16826 CrossRef

32.

Zhang X, Pan Y, Ye M, Quhe R, Wang Y, Guo Y, Zhang H, Dan Y, Song Z, Li J, Yang J, Guo W, Lu J (2017) Three-layer phosphorene-metal interfaces. Nano Res 11(2):707–721. https://doi.org/10.1007/s12274-017-1680-6 CrossRef

33.

Quhe R, Qiu L, Zhang Q, Wang Y, Han Z, Jing L, Dong C, Kai L, Yu Y, Lun D, Feng P, Ming L, Jing L (2018) Simulations of quantum transport in sub-5-nm monolayer phosphorene transistors. Phys Rev Appl 10(2):024022. https://doi.org/10.1103/PhysRevApplied.10.024022 CrossRef

34.

Desai SB, Madhvapathy SR, Sachid AB, Llinas JP, Wang Q, Ahn GH, Pitner G, Kim MJ, Bokor J, Hu C (2016) MoS₂ transistors with 1-nanometer gate lengths. Science 354(6308):99–102. https://doi.org/10.1126/science.aah4698 CrossRef

35.

Datta S (1995) Electronic transport in mesoscopic systems. In: Cambridge studies in semiconductor physics and microelectronic engineering (book 3). Cambridge University Press, Cambridge. https://doi.org/10.1063/1.2807624 CrossRef

36.

Kaloni TP, Kou L, Frauenheim T, Schwingenschlögl U (2014) Quantum spin Hall states in graphene interacting with WS₂ or WSe₂. Appl Phys Lett 105(23):233112. https://doi.org/10.1063/1.4903895 CrossRef

37.

Huang Y, Ling C, Liu H, Wang S, Geng B (2014) Versatile electronic and magnetic properties of SnSe₂ nanostructures induced by the strain. J Phys Chem C 118(17):9251–9260. https://doi.org/10.1021/jp5013158 CrossRef

38.

Bardeen J (1947) Surface states and rectification at a metal semi-conductor contact. Phys Rev 71(10):717–727. https://doi.org/10.1103/PhysRev.71.717 CrossRef

39.

Xiaochen D, Dongliang F, Wenjing F, Yumeng S, Peng C, Lain-Jong L (2010) Doping single-layer graphene with aromatic molecules. Small 5(12):1422–1426. https://doi.org/10.1002/smll.200801711 CrossRef

40.

Cho H, Kim SD, Han TH, Song I, Byun JW, Kim YH, Kwon S, Bae SH, Choi HC, Ahn JH (2015) Improvement of work function and hole injection efficiency of graphene anode using CHF₃ plasma treatment. 2D Mater 2(1):014002. https://doi.org/10.1088/2053-1583/2/1/014002 CrossRef

41.

Movva HCP, Ramón ME, Corbet CM, Sonde S, Chowdhury SF, Carpenter G, Tutuc E, Banerjee SK (2012) Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions. Appl Phys Lett 101(18):183. https://doi.org/10.1063/1.4765658 CrossRef

42.

Justin W, Liming X, Yanguang L, Hailiang W, Yijian O, Jing G, Hongjie D (2011) Controlled chlorine plasma reaction for noninvasive graphene doping. J Am Chem Soc 133(49):19668–19671. https://doi.org/10.1021/ja2091068 CrossRef

43.

Britnell L, Gorbachev RV, Jalil R, Belle BD, Schedin F, Mishchenko A, Georgiou T, Katsnelson MI, Eaves L, Morozov SV (2012) Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335(6071):947–950. https://doi.org/10.1126/science.1218461 CrossRef

44.

Yu WJ, Li Z, Zhou H, Chen Y, Wang Y, Huang Y, Duan X (2013) Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat Mater 12(3):246–252. https://doi.org/10.1038/NMAT3518 CrossRef

45.

Lin YF, Li W, Li SL, Xu Y, Aparecidoferreira A, Komatsu K, Sun H, Nakaharai S, Tsukagoshi K (2013) Barrier inhomogeneities at vertically stacked graphene-based heterostructures. Nanoscale 6(2):795–799. https://doi.org/10.1039/c3nr03677d CrossRef

46.

Georgiou T, Jalil R, Belle BD, Britnell L, Gorbachev RV, Morozov SV, Kim YJ, Gholinia A, Haigh SJ, Makarovsky O (2013) Vertical field-effect transistor based on graphene-WS₂ heterostructures for flexible and transparent electronics. Nat Nanotechnol 8(2):100–103. https://doi.org/10.1038/nnano.2012.224 CrossRef

47.

Shim J, Kim HS, Shim YS, Kang DH, Park HY, Lee J, Jeon J, Jung SJ, Song YJ, Jung WS (2016) Extremely large gate modulation in vertical graphene/WSe₂ heterojunction barristor based on a novel transport mechanism. Adv Mater 28(26):5293–5299. https://doi.org/10.1002/adma.201506004 CrossRef

48.

Kang J, Jariwala D, Ryder CR, Wells SA, Choi Y, Hwang E, Cho JH, Marks TJ, Hersam MC (2016) Probing out-of-plane charge transport in black phosphorus with graphene-contacted vertical field-effect transistors. Nano Lett 16(4):2580–2585. https://doi.org/10.1021/acs.nanolett.6b00144 CrossRef

49.

International Technology Roadmap for Semiconductors (ITRS) 2.0 (2015 Edition), Executive Report. Semiconductor Industry Association. http://www.itrs2.net/

Titel: Ohmic contact in graphene/SnSe2 Van Der Waals heterostructures and its device performance from ab initio simulation
verfasst von: Hong Li
Peipei Xu
Jiakun Liang
Fengbin Liu
Jing Luo
Jing Lu
Publikationsdatum: 01.01.2020
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 10/2020
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-019-04286-x

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